晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 864/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 40V 85A TO220AB |
5,868 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 3V @ 250µA | 250nC @ 10V | ±20V | 6860pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
3,544 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 10V | 10mOhm @ 20A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 4660pF @ 50V | - | 3.75W (Ta), 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 90A TO220AB |
5,760 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.9mOhm @ 28.8A, 10V | 2.5V @ 250µA | 257nC @ 10V | ±20V | 12065pF @ 15V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 90A TO220AB |
7,308 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 6.8mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | ±20V | 4620pF @ 30V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 90A TO220AB |
3,636 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 7.7mOhm @ 20A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 4250pF @ 30V | - | 3.75W (Ta), 208.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 90A TO220AB |
2,556 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 100nC @ 10V | ±20V | 4180pF @ 75V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
8,730 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 6550pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 385MA SOT23-3 |
2,340 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 385mA (Ta) | 4.5V, 10V | 1.4Ohm @ 500mA, 10V | 3V @ 250µA | 1nC @ 10V | ±20V | 31pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 40V 13A SO-8FL |
6,732 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 75A (Tc) | 4.5V, 10V | 9.3mOhm @ 20A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 1231pF @ 20V | - | 3.6W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 40V 22A PQFN |
3,598 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | ±20V | 2460pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 150V 5.0A PQFN |
3,798 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1350pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN |
4,770 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | ±20V | 1380pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 20V 10A PQFN |
3,978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | ±12V | 1110pF @ 10V | - | 1.98W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN |
7,668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1019pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 5X6 PQFN |
5,850 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 3180pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 17A 5X6 PQFN |
7,974 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32nC @ 10V | ±20V | 2487pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 5X6 PQFN |
3,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 56A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 3.3W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN |
6,138 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 3.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 9.7A 5X6 PQFN |
2,682 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10nC @ 10V | ±20V | 790pF @ 10V | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 5.8A 2X2 PQFN |
3,078 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | ±12V | 877pF @ 10V | - | 2.1W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
3,474 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.7mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | ±20V | 4300pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 100V 103A D2PAK |
8,496 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 24A TO247 |
5,346 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 20V | 220mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 134W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A 8SOP |
2,880 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 2110pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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NXP |
MOSFET N-CH 25V 100A LFPAK |
4,698 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.05mOhm @ 25A, 10V | 1.95V @ 1mA | 57nC @ 10V | ±20V | 3504pF @ 12V | - | 141W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 100V 520MA SOT223 |
2,250 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 520mA (Tc) | 5V | 10Ohm @ 150mA, 5V | 2V @ 1mA | - | ±20V | 40pF @ 10V | - | 6.25W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 20V 0.98A SOT416 |
2,232 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 980mA (Tc) | 1.8V, 4.5V | 340mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | ±8V | 45pF @ 20V | - | 530mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 30V 0.84A SOT416 |
6,084 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 840mA (Tc) | 2.5V, 4.5V | 440mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | ±12V | 37pF @ 25V | - | 530mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 20V 1A SOT323 |
3,978 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Tc) | 2.5V, 4.5V | 350mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | ±12V | 34pF @ 20V | - | 560mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 55V 46A LFPAK |
4,284 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 46A | - | 17.3mOhm @ 20A, 10V | 2V @ 1mA | 18nC @ 5V | - | 1992pF @ 25V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |