Taiwan Semiconductor Corporation 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Taiwan Semiconductor Corporation

記錄 5,388

頁面 11/180

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
RS2DA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	19,734	-	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS23M RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A MICRO SMA	174,258	-	Schottky	30V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SS13M RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MICRO SMA	28,164	-	Schottky	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SS22M RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A MICRO SMA	23,028	-	Schottky	20V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 20V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
HS1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	33,072	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	29,004	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1JM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MICRO SMA	176,232	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 600V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
S1JMHRSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MICRO SMA	157,212	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 600V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
S1GM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	24,804	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
S1GMHRSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	24,762	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
HS1KL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	18,072	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1F R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	15,816	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS1H4LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	248,922	-	Schottky	40V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 40V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS1H6LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	29,454	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 60V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
ESH1GM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	81,756	-	Standard	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 400V	3pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SS13MHRSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MICRO SMA	27,894	-	Schottky	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
BYG21M R3G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1KV 1.5A DO214AC	28,188	-	Avalanche	1000V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS19 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AC	65,364	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	14,892	-	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	17,370	-	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF24G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2,000	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS29L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	231,822	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS210L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	233,634	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23MHRSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A MICRO SMA	157,944	-	Schottky	30V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SS1H15LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123HE	26,214	-	Schottky	150V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 150V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
ES1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	53,964	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG21MHR3G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1KV 1.5A DO214AC	17,478	-	Avalanche	1000V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS215L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SUB SMA	46,668	-	Schottky	150V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BYG20D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	14,604	-	Standard	200V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2KA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	18,120	-	Standard	800V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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