GeneSiC Semiconductor 整流器-數組
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類別半導體 / 二極管與整流器 / 整流器-數組
制造商GeneSiC Semiconductor
記錄 906
頁面 16/31
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管配置 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io）（每個二極管） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 工作溫度-結點 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER |
6,948 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 200A | 880mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER |
3,384 |
|
- | 1 Pair Common Anode | Schottky | 150V | 200A | 880mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
3,330 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 100A | 2.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
7,542 |
|
- | 1 Pair Common Anode | Standard | 1200V | 100A | 2.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
8,190 |
|
- | 1 Pair Common Cathode | Standard | 200V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
7,560 |
|
- | 1 Pair Common Anode | Standard | 200V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
5,148 |
|
- | 1 Pair Common Cathode | Standard | 400V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
8,910 |
|
- | 1 Pair Common Anode | Standard | 400V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
2,772 |
|
- | 1 Pair Common Cathode | Standard | 600V | 100A | 1.7V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
6,444 |
|
- | 1 Pair Common Anode | Standard | 600V | 100A | 1.7V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 400V 400A 3TOWER |
7,398 |
|
- | 1 Pair Common Cathode | Standard | 400V | 400A (DC) | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 400A 3TOWER |
2,322 |
|
- | 1 Pair Common Cathode | Standard | 50V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 400A 3TOWER |
2,880 |
|
- | 1 Pair Common Anode | Standard | 50V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
3,600 |
|
- | 1 Pair Common Cathode | Standard | 100V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
7,650 |
|
- | 1 Pair Common Anode | Standard | 100V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 400A 3TOWER |
3,726 |
|
- | 1 Pair Common Cathode | Standard | 200V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 400A 3TOWER |
6,048 |
|
- | 1 Pair Common Anode | Standard | 200V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 400A 3TOWER |
2,718 |
|
- | 1 Pair Common Cathode | Standard | 600V | 400A (DC) | 1.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 400A 3TOWER |
3,780 |
|
- | 1 Pair Common Anode | Standard | 600V | 400A (DC) | 1.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 200A 3 TOWER |
2,700 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 200A | 920mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 200A 3 TOWER |
5,112 |
|
- | 1 Pair Common Anode | Schottky | 200V | 200A | 920mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A 3 TOWER |
2,430 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 250A | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A 3 TOWER |
2,250 |
|
- | 1 Pair Common Anode | Schottky | 150V | 250A | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.6KV 600A 3TOWER |
5,274 |
|
- | - | - | 1600V | 600A (DC) | - | Standard Recovery >500ns, > 200mA (Io) | - | - | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1KV 600A 3TOWER |
2,160 |
|
- | 1 Pair Common Cathode | Standard | 1000V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.2KV 600A 3TOWER |
4,320 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.4KV 600A 3TOWER |
4,482 |
|
- | 1 Pair Common Cathode | Standard | 1400V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.6KV 600A 3TOWER |
4,986 |
|
- | - | - | 1600V | 600A (DC) | - | Standard Recovery >500ns, > 200mA (Io) | - | - | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 600A 3TOWER |
8,406 |
|
- | 1 Pair Common Cathode | Standard | 600V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 800V 600A 3TOWER |
5,220 |
|
- | 1 Pair Common Cathode | Standard | 800V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |