Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 158/225
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制造商 |
描述 |
庫存 |
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系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 60V 11.5A TO-220AB |
7,110 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | P-TO220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5 |
8,532 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | ±20V | 2660pF @ 25V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-5-3 | TO-220-5 Formed Leads |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5 |
4,752 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | ±20V | 2660pF @ 25V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | P-TO220-5-43 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5 |
4,680 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | ±20V | 2660pF @ 25V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO220-5-62 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5 |
5,994 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90nC @ 10V | ±20V | 1730pF @ 25V | Temperature Sensing Diode | 120W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-5-3 | TO-220-5 Formed Leads |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5 |
3,348 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90nC @ 10V | ±20V | 1730pF @ 25V | Temperature Sensing Diode | 120W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | P-TO220-5-43 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7 |
7,722 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | P-TO220-7-3 | TO-220-7 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7 |
6,948 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | P-TO220-7-230 | TO-220-7 |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO-263 |
3,744 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220AB |
6,678 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO263 |
8,802 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 10V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO262-3 |
2,880 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO262-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220AB |
8,100 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 13.5A TO-220 |
7,524 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 9.5A TO220AB |
4,266 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 9.5A D2PAK |
8,208 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.5A TO-263 |
4,716 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB |
5,022 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220AB |
6,066 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220 |
8,316 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220AB |
6,768 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V | 600mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB |
6,192 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
7,200 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 55A, 10V | 2V @ 100µA | 57nC @ 5V | ±20V | 7027pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
7,488 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59nC @ 5V | ±20V | 7624pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
4,428 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.5mOhm @ 55A, 10V | 2V @ 70µA | 40nC @ 5V | ±20V | 5203pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
8,208 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.5mOhm @ 55A, 10V | 2V @ 70µA | 40nC @ 5V | ±20V | 5203pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
3,258 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 4.6mOhm @ 55A, 10V | 2V @ 50µA | 25nC @ 5V | ±20V | 3110pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
7,902 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 60A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | 3209pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A D2PAK |
4,770 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.2mOhm @ 80A, 10V | 2V @ 180µA | 157nC @ 10V | ±20V | 5100pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
3,708 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2653pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |