Infineon Technologies 晶體管-FET,MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 225/225
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓(Vdss) | 電流-25°C時的連續漏極(Id) | 驅動電壓(Max Rds On,Min Rds On) | Rds On(Max)@ Id,Vgs | Vgs(th)(最大)@ ID | 門電荷(Qg)(最大值)@ Vgs | Vgs(最大) | 輸入電容(Ciss)(最大值)@ Vds | FET功能 | 功耗(最大值) | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
TRENCH 40<-<100V |
3,636 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27nC @ 10V | ±20V | 1100pF @ 30V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
TRENCH 40<-<100V |
5,562 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
TRENCH 40<-<100V |
2,412 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
TRENCH 40<-<100V |
7,488 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 400mOhm @ 4.3A, 10V | 4V @ 166µA | 6.7nC @ 10V | ±20V | 260pF @ 30V | - | 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET N-CH 900V TO-220 |
7,830 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | ±20V | 850pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH D2PAK |
5,382 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,186 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6,768 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
7,686 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,636 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
4,824 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
5,238 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4,590 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4,878 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET P-CH TO252-3 |
5,760 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH TO252-3 |
6,912 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH TO252-3 |
5,544 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27nC @ 10V | ±20V | 1100pF @ 30V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH TO252-3 |
7,596 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH TO252-3 |
8,496 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
7,146 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
6,192 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
5,940 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Infineon Technologies |
MOSFET N-CH 100V 67A TO263-3 |
2,556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 20V 20A 8-SOIC |
6,840 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
8,424 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH |
4,680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
4,392 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
TRANSISTOR NPN |
2,412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR NPN |
5,418 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |