Infineon Technologies 晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 191/225
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 650V 6.6A TO-220 |
8,262 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-220 |
2,628 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | ±20V | 1820pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 15A TO-220 |
5,256 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1600pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 15A TO-220 |
4,392 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | ±20V | 1280pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 15A TO-220 |
4,590 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | ±20V | 1490pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 21.7A TO-220 |
5,616 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | ±20V | 3160pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 800MA TO251-3 |
2,934 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5nC @ 10V | ±20V | 100pF @ 25V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 1.8A TO251-3 |
7,290 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | ±20V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 3.2A TO251-3 |
4,806 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 4.5A TO251-3 |
7,974 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 6.6A TO-247 |
5,706 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-247 |
5,580 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | ±20V | 1820pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 195A D2-PAK |
5,220 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 27A D2-PAK |
4,536 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
6,030 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3175pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
2,070 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9130pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
2,178 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK |
8,406 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | ±20V | 1200pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 105A D2PAK-7 |
8,838 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 5320pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 195A D2-PAK |
8,244 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 72A D2-PAK |
3,582 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 33A D2-PAK |
2,196 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK |
5,544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 50A D-PAK |
6,336 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
6,264 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 1.4mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | ±20V | 10990pF @ 40V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A D2-PAK |
8,820 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 195A D2-PAK |
3,436 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7 |
3,960 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11490pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
8,460 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 195A TO262 |
2,358 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |