Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 203/225
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制造商 |
描述 |
庫存 |
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系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET-LV |
2,250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Tc) | 4.5V, 10V | 8.9mOhm @ 13A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET-LV |
5,634 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Tc) | 4.5V, 10V | 8.9mOhm @ 13A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4110pF @ 15V | - | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
7,434 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | ±20V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
6,318 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | ±25V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220AB |
3,204 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 24A PQFN |
8,550 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 3120pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 22A PQFN |
2,484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | ±20V | 2460pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN |
2,538 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | ±20V | 1380pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 100V 11A TO220-5 |
4,392 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 9.9A 8SOIC |
8,244 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.9A (Ta) | 2.5V, 4.5V | 14.6mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1025pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 22A PQFN |
3,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | ±20V | 2460pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 150V 5.0A PQFN |
3,798 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1350pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN |
4,770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | ±20V | 1380pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 20V 10A PQFN |
3,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | ±12V | 1110pF @ 10V | - | 1.98W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN |
7,668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1019pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 5X6 PQFN |
5,850 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 3180pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 17A 5X6 PQFN |
7,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32nC @ 10V | ±20V | 2487pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 5X6 PQFN |
3,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 56A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 3.3W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN |
6,138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 3.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 9.7A 5X6 PQFN |
2,682 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10nC @ 10V | ±20V | 790pF @ 10V | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 5.8A 2X2 PQFN |
3,078 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | ±12V | 877pF @ 10V | - | 2.1W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 103A D2PAK |
8,496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 45A TO263-3-2 |
4,590 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 4.5V, 10V | 7.6mOhm @ 45A, 10V | 2.2V @ 17µA | 30nC @ 10V | +20V, -16V | 2340pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3-11 |
5,400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 0.17A SOT23 |
5,580 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220-3 |
2,700 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220-3 |
7,272 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO220-3 |
4,122 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
7,974 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |