Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 211/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 40V 85A 8PQFN |
4,302 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138nC @ 10V | ±20V | 4574pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 22A DIRECTFET |
2,484 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.9mOhm @ 22A, 10V | 2.4V @ 150µA | 130nC @ 10V | ±20V | 7305pF @ 15V | - | 2.1W (Ta), 113W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N CH 100V 62A TO-220AB |
3,580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 62A (Tc) | 10V | 13.5mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
8,244 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 250V 9.3A DPAK |
20,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | ±20V | 705pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 55V 95A SUPER-220 |
5,256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N CH 30V 13A 8-SO |
6,642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N CH 40V 14A 8-SO |
8,442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100nC @ 7V | ±8V | 3520pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK |
8,820 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
12,347 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 55V 16A DPAK |
3,834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 55V 5A SOT223 |
4,716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N CH 55V 16A SOT 223 |
2,718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 5.2A SOT223 |
2,340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220AB |
6,462 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
3,816 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
6,246 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 35A DIRECTFET |
2,070 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 184A (Tc) | 10V | 1.6mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | ±20V | 7471pF @ 25V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 40V 31A DIRECTFET |
8,694 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | ±20V | 5469pF @ 25V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N CH 75V 56A IPAK |
7,650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET 30V 25A POWER 8-SO |
8,460 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET 30V 25A POWER 8-SO |
3,294 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 250V 57A TO247AC |
6,570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5860pF @ 25V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 75V 56A IPAK |
7,470 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N CH 75V 56A I-PAK |
8,172 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6,660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
5,166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
5,400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
7,092 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
4,320 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1091pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |