ISSI, Integrated Silicon Solution Inc 內存
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類別半導體 / 內存IC / 內存
制造商ISSI, Integrated Silicon Solution Inc
記錄 4,379
頁面 48/146
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描述 |
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系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字,頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 400MHZ |
2,754 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
4,482 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 400MHZ |
2,502 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA |
7,182 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TSOP I |
5,058 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA |
6,390 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (8M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA |
4,320 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (256M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
8,478 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M PARALLEL 36MBGA |
6,606 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 2Mb (256K x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 36-TFBGA | 36-TFBGA (6x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
8,820 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
6,858 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 78TWBGA |
5,652 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (512M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (9x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
8,514 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TFBGA |
7,902 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 55ns | 55ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (9x11) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
4,406 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
8,838 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
3,546 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
2,052 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP |
7,380 |
|
- | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 36MBGA |
6,534 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 36-TFBGA | 36-TFBGA (6x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA |
6,318 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA |
4,014 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 133MHZ 16SOIC |
5,850 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA |
6,084 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
6,048 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP |
5,130 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
7,524 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
7,398 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 100LQFP |
7,938 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84WBGA |
8,856 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |