ISSI, Integrated Silicon Solution Inc 內存
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類別半導體 / 內存IC / 內存
制造商ISSI, Integrated Silicon Solution Inc
記錄 4,379
頁面 50/146
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制造商 |
描述 |
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系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字,頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
5,706 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
3,312 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
4,626 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II |
5,928 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA |
7,992 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (64M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
7,020 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
2,754 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA |
6,552 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA |
4,842 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (8M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA |
6,120 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (256M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
2,790 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 78TWBGA |
3,006 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (512M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (9x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
7,902 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA |
3,490 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
6,930 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
7,416 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
15,115 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
4,824 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
7,038 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA |
2,322 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II |
8,370 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II |
4,266 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
1,202 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
8,604 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
2,322 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP |
2,340 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA |
7,776 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
8,568 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 256Mb (8M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
6,570 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II |
2,502 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |