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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 276/287
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制造商
描述
庫存
數量
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內存類型
內存格式
技術
內存大小
內存接口
時鐘頻率
寫周期-字,頁
訪問時間
電壓-供電
工作溫度
安裝類型
包裝/箱
供應商設備包裝
MTFC64GAPALNA-AIT ES
Micron Technology Inc.
EMMC 512GBIT MMC5.1 J58X AT
6,156
*
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MTFC8GAMALBH-AAT ES
Micron Technology Inc.
IC FLASH 64G MMC
4,446
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
-
-40°C ~ 105°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MTFC8GAMALBH-AIT ES
Micron Technology Inc.
IC FLASH 64G MMC
8,118
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MTFC8GAMALNA-AAT ES
Micron Technology Inc.
IC FLASH 64G MMC
3,780
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
-
-40°C ~ 105°C (TA)
Surface Mount
100-TBGA
100-TBGA (14x18)
MTFC8GAMALNA-AIT ES
Micron Technology Inc.
IC FLASH 64G MMC
5,814
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (14x18)
ECB130ABDCN-Y3
Micron Technology Inc.
LPDDR2 1G DIE 32MX32
7,596
*
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ECF440AACCN-V6-Y3
Micron Technology Inc.
LPDDR3 4G DIE 128MX32
2,178
*
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ECF440AACCN-Y3
Micron Technology Inc.
LPDDR3 4G DIE 128MX32
6,354
*
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ECF620AAACN-C1-Y3
Micron Technology Inc.
LPDDR3 6G DIE 192MX32
5,652
*
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ECF620AAACN-C1-Y3-ES
Micron Technology Inc.
LPDDR3 6G DIE 192MX32
6,894
*
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ECF620AAACN-C2-Y3
Micron Technology Inc.
LPDDR3 6G DIE 192MX32
2,286
*
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ECF620AAACN-C2-Y3-ES
Micron Technology Inc.
LPDDR3 6G DIE 192MX32
7,776
*
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EDF8164A3MC-GD-F-R
Micron Technology Inc.
IC DRAM 8G PARALLEL 800MHZ FBGA
6,102
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
8Gb (128M x 64)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
-
-
-
EDF8164A3MD-GD-F-R
Micron Technology Inc.
IC DRAM 8G PARALLEL 800MHZ FBGA
3,436
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
8Gb (128M x 64)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
-
-
-
MT25QL128QLHS8E3WC2-0AAT
Micron Technology Inc.
SLC 128M DIE 32MX4
4,410
*
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MT29F128G08CBCEBL05B3WC1ES
Micron Technology Inc.
MLC 128G DIE 16GX8
6,084
*
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MT29F128G08CBECBL95B3WC1
Micron Technology Inc.
IC FLASH 128G PARALLEL DIE
6,822
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBCDBB05A3WC1ES
Micron Technology Inc.
TLC 128G DIE 16GX8
8,946
*
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MT29F128G08EBHDBB05A3WC1ES
Micron Technology Inc.
TLC 128G DIE 16GX8
7,398
*
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MT29F256G08EBCAGB16A3WC1-M
Micron Technology Inc.
TLC 256G DIE 32GX8
2,628
*
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MT29F256G08EBHAFB16A3WC1
Micron Technology Inc.
TLC 256G DIE 32GX8
6,948
*
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MT29F256G08EBHAFB16A3WC1-M
Micron Technology Inc.
TLC 256G DIE 32GX8
6,318
*
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MT29F256G08EBHAFB16A3WEA
Micron Technology Inc.
TLC 256G DIE 32GX8
8,568
*
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MT29F256G08EBHAFB16A3WSA
Micron Technology Inc.
TLC 256G DIE 32GX8
4,464
*
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MT29F256G08EBHAFB16A3WTA
Micron Technology Inc.
TLC 256G DIE 32GX8
4,824
*
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MT29F2G01ABBGDM79A3WC1
Micron Technology Inc.
SLC 2G DIE 2GX1
8,190
*
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MT29F4G08ABAFAM70A3WC1
Micron Technology Inc.
SLC 4G DIE 512MX8
7,074
*
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MT29F4G16ABBFAM70A3WC1
Micron Technology Inc.
SLC 4G DIE 256MX16
5,868
*
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MT29F64G08ABEBBM84C3WC1
Micron Technology Inc.
SLC 64G DIE 8GX8
5,508
*
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MT40A256M16Z90BWC1
Micron Technology Inc.
DDR4 4G DIE 256MX16
5,868
*
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