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Microsemi 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Microsemi Corporation
記錄 2,560
頁面 27/86
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
CDLL5817
Microsemi
DIODE SCHOTTKY 20V 1A DO213AB
6,399
-
Schottky
20V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 125°C
JAN1N3957
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
7,596
Military, MIL-PRF-19500/228
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 300V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N4944
Microsemi
DIODE GEN PURP 400V 1A AXIAL
2,358
Military, MIL-PRF-19500/360
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N6641
Microsemi
DIODE GEN PURPOSE
2,970
*
-
-
-
-
-
-
-
-
-
-
-
-
CDLL6759
Microsemi
DIODE SCHOTTKY 60V 1A DO213AB
5,310
-
Schottky
60V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 125°C
CDLL1A50
Microsemi
DIODE SCHOTTKY 50V 1A DO213AB
3,474
-
Schottky
50V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
0.9pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-
JAN1N3613
Microsemi
DIODE GEN PURP 600V 1A AXIAL
7,164
Military, MIL-PRF-19500/228
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 300V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N3614
Microsemi
DIODE GEN PURP 800V 1A AXIAL
3,906
Military, MIL-PRF-19500/228
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N5614
Microsemi
DIODE GEN PURP 200V 1A AXIAL
4,590
Military, MIL-PRF-19500/427
Standard
200V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 200V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
APT100DL60BG
Microsemi
DIODE GEN PURP 600V 100A TO247
508
-
Standard
600V
100A
1.6V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
JAN1N5804
Microsemi
DIODE GEN PURP 100V 2.5A AXIAL
5,058
Military, MIL-PRF-19500/477
Standard
100V
2.5A
975mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N5806
Microsemi
DIODE GEN PURP 150V 2.5A AXIAL
1,382
Military, MIL-PRF-19500/477
Standard
150V
2.5A
975mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5621
Microsemi
DIODE GEN PURP 800V 1A AXIAL
6,012
Military, MIL-PRF-19500/429
Standard
800V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 800V
20pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5622
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
6,246
Military, MIL-PRF-19500/427
Standard
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
JANTX1N5551
Microsemi
DIODE GEN PURP 400V 5A AXIAL
10,175
Military, MIL-PRF-19500/420
Standard
400V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 400V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N4944
Microsemi
DIODE GEN PURP 400V 1A AXIAL
7,758
Military, MIL-PRF-19500/359
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N6638US
Microsemi
DIODE GEN PURPOSE
6,264
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N5550
Microsemi
DIODE GEN PURP 200V 5A AXIAL
4,482
Military, MIL-PRF-19500/420
Standard
200V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6642
Microsemi
DIODE GEN PURPOSE
7,416
*
-
-
-
-
-
-
-
-
-
-
-
-
1N6620
Microsemi
DIODE GEN PURP 220V 1.2A AXIAL
6,066
-
Standard
220V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
10pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
JAN1N6638U
Microsemi
DIODE GEN PURP 150V 300MA B-MELF
6,012
Military, MIL-PRF-19500/578
Standard
150V
300mA
1.1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 150V
2.5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JAN1N6638US
Microsemi
DIODE GEN PURP 150V 300MA D-MELF
5,400
Military, MIL-PRF-19500/578
Standard
150V
300mA
1.1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 150V
2.5pF @ 0V, 1MHz
Surface Mount
DO-213AB, MELF
B, SQ-MELF
-65°C ~ 175°C
1N5819-1
Microsemi
DIODE SCHOTTKY 45V 1A DO204AL
3,920
-
Schottky
45V
1A
340mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
70pF @ 5V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 125°C
JAN1N5415
Microsemi
DIODE GEN PURP 50V 3A AXIAL
7,812
Military, MIL-PRF-19500/411
Standard
50V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 50V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5416
Microsemi
DIODE GEN PURP 100V 3A AXIAL
5,526
Military, MIL-PRF-19500/411
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5417
Microsemi
DIODE GEN PURP 200V 3A AXIAL
5,220
Military, MIL-PRF-19500/411
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5806US
Microsemi
DIODE GEN PURP 150V 2.5A D5A
7,182
Military, MIL-PRF-19500/477
Standard
150V
2.5A
975mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JAN1N5809
Microsemi
DIODE GEN PURP 100V 6A AXIAL
5,238
Military, MIL-PRF-19500/477
Standard
100V
6A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5811
Microsemi
DIODE GEN PURP 150V 6A AXIAL
132
Military, MIL-PRF-19500/477
Standard
150V
6A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5186
Microsemi
DIODE GEN PURP 100V 3A AXIAL
3,456
-
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
2µA @ 100V
-
Through Hole
B, Axial
-
-65°C ~ 175°C