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Microsemi 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Microsemi Corporation
記錄 2,560
頁面 29/86
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
JANTX1N5417
Microsemi
DIODE GEN PURP 200V 3A AXIAL
500
Military, MIL-PRF-19500/411
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5711-1
Microsemi
DIODE SCHOTTKY 70V 33MA DO35
3,366
Military, MIL-PRF-19500/444
Schottky
70V
33mA
410mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
JAN1N5617US
Microsemi
DIODE GEN PURP 400V 1A D5A
5,886
Military, MIL-PRF-19500/429
Standard
400V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTX1N3595UR-1
Microsemi
DIODE GEN PURP 125V 150MA DO213
2,808
Military, MIL-PRF-19500/241
Standard
125V
150mA
920mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
1nA @ 125V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
JANTXV1N4249
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
3,474
Military, MIL-PRF-19500/286
Standard
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N6641US
Microsemi
DIODE GEN PURPOSE
7,794
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N6643U
Microsemi
DIODE GEN PURP 50V 300MA B-MELF
8,730
Military, MIL-PRF-19500/578
Standard
50V
300mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 50V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTX1N5811
Microsemi
DIODE GEN PURP 150V 3A AXIAL
2,664
Military, MIL-PRF-19500/477
Standard
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5807
Microsemi
DIODE GEN PURP 50V 3A AXIAL
7,542
Military, MIL-PRF-19500/477
Standard
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5809
Microsemi
DIODE GEN PURP 100V 3A AXIAL
8,388
Military, MIL-PRF-19500/477
Standard
100V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6639US
Microsemi
DIODE GEN PURPOSE
7,794
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N4249
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
7,614
Military, MIL-PRF-19500/286
Standard
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N3600
Microsemi
ZENER DIODE
5,994
Military, MIL-PRF-19500/231
-
50V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-65°C ~ 175°C
JANTX1N5554
Microsemi
DIODE GEN PURP 1KV 5A AXIAL
8,532
Military, MIL-PRF-19500/420
Standard
1000V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
2µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5802
Microsemi
DIODE GEN PURP 50V 2.5A AXIAL
7,632
Military, MIL-PRF-19500/477
Standard
50V
2.5A
975mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
CDLL5194
Microsemi
DIODE GEN PURP 80V 200MA DO213AA
5,832
-
Standard
80V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 80V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
CDLL5196
Microsemi
DIODE GEN PURP 250V 200MA DO213
2,628
-
Standard
250V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 250V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
1N5194UR
Microsemi
DIODE GEN PURP 70V 200MA DO213AA
2,106
-
Standard
70V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 70V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
1N5196UR
Microsemi
DIODE GEN PURP 225V 200MA DO213
3,636
-
Standard
225V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 225V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
JAN1N5553
Microsemi
DIODE GEN PURP 800V 3A AXIAL
4,878
Military, MIL-PRF-19500/420
Standard
800V
3A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JAN1N5554
Microsemi
DIODE GEN PURP 1KV 3A AXIAL
8,694
Military, MIL-PRF-19500/420
Standard
1000V
3A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5415
Microsemi
DIODE GEN PURP 50V 3A AXIAL
4,896
Military, MIL-PRF-19500/411
Standard
50V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 50V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5712-1
Microsemi
DIODE SCHOTTKY 20V 750MA DO35
2,574
Military, MIL-PRF-19500/444
Schottky
20V
750mA
1V @ 35mA
Fast Recovery =< 500ns, > 200mA (Io)
-
150nA @ 16V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 150°C
JANTXV1N4246
Microsemi
DIODE GEN PURP 400V 1A AXIAL
8,244
Military, MIL-PRF-19500/286
Standard
400V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N5620US
Microsemi
DIODE GEN PURP 800V 1A D5A
4,554
Military, MIL-PRF-19500/427
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
JAN1N5809US
Microsemi
DIODE GEN PURP 100V 6A B-MELF
2,610
Military, MIL-PRF-19500/477
Standard
100V
6A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
JAN1N5811US
Microsemi
DIODE GEN PURP 150V 6A B-MELF
2,196
Military, MIL-PRF-19500/477
Standard
150V
6A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N5186US
Microsemi
DIODE GEN PURP 100V 3A AXIAL
6,246
-
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
2µA @ 100V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5187US
Microsemi
DIODE GEN PURP 200V 3A AXIAL
2,322
-
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
2µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5188US
Microsemi
DIODE GEN PURP 400V 3A AXIAL
6,480
-
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
2µA @ 400V
-
Through Hole
B, Axial
-
-65°C ~ 175°C