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Microsemi 晶體管-FET,MOSFET-單

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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-單
制造商Microsemi Corporation
記錄 611
頁面 20/21
圖片
型號
制造商
描述
庫存
數量
系列
FET類型
技術
漏極至源極電壓(Vdss)
電流-25°C時的連續漏極(Id)
驅動電壓(Max Rds On,Min Rds On)
Rds On(Max)@ Id,Vgs
Vgs(th)(最大)@ ID
門電荷(Qg)(最大值)@ Vgs
Vgs(最大)
輸入電容(Ciss)(最大值)@ Vds
FET功能
功耗(最大值)
工作溫度
安裝類型
供應商設備包裝
包裝/箱
JANTXV2N6898
Microsemi
MOSFET P-CHANNEL 100V 25A TO3
3,996
-
P-Channel
MOSFET (Metal Oxide)
100V
25A (Tc)
10V
200mOhm @ 15.8A, 10V
4V @ 250µA
-
±20V
3000pF @ 25V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA, TO-3
APT1001R1BN
Microsemi
MOSFET N-CH 1000V 10.5A TO247AD
6,480
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
10.5A (Tc)
10V
1.1Ohm @ 5.25A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1001RBN
Microsemi
MOSFET N-CH 1000V 11A TO247AD
5,274
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
11A (Tc)
10V
1Ohm @ 5.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1002RBNG
Microsemi
MOSFET N-CH 1000V 8A TO247AD
6,066
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
8A (Tc)
10V
1.6Ohm @ 4A, 10V
4V @ 1mA
105nC @ 10V
±30V
1800pF @ 25V
-
240W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT4065BNG
Microsemi
MOSFET N-CH 400V 11A TO247AD
6,516
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
11A (Tc)
10V
650mOhm @ 5.5A, 10V
4V @ 1mA
55nC @ 10V
±30V
950pF @ 25V
-
180W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT40M42JN
Microsemi
MOSFET N-CH 400V 86A ISOTOP
3,384
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
86A (Tc)
10V
42mOhm @ 43A, 10V
4V @ 5mA
760nC @ 10V
±30V
14000pF @ 25V
-
690W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT40M75JN
Microsemi
MOSFET N-CH 400V 56A ISOTOP
5,346
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
56A (Tc)
10V
75mOhm @ 28A, 10V
4V @ 2.5mA
370nC @ 10V
±30V
6800pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5012JN
Microsemi
MOSFET N-CH 500V 43A ISOTOP
6,966
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
43A (Tc)
10V
120mOhm @ 21.5A, 10V
4V @ 2.5mA
370nC @ 10V
±30V
6500pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5020BN
Microsemi
MOSFET N-CH 500V 28A TO247AD
4,626
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
200mOhm @ 14A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5020BNFR
Microsemi
MOSFET N-CH 500V 28A TO247AD
5,148
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
200mOhm @ 14A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5022BNG
Microsemi
MOSFET N-CH 500V 27A TO247AD
3,978
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
27A (Tc)
10V
220mOhm @ 13.5A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5025BN
Microsemi
MOSFET N-CH 500V 23A TO247AD
2,916
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
23A (Tc)
10V
250mOhm @ 11.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6030BN
Microsemi
MOSFET N-CH 600V 23A TO247AD
3,654
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
300mOhm @ 11.5A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6040BN
Microsemi
MOSFET N-CH 600V 18A TO247AD
3,870
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
400mOhm @ 9A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6040BNG
Microsemi
MOSFET N-CH 600V 18A TO247AD
8,298
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
400mOhm @ 9A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT8018JN
Microsemi
MOSFET N-CH 800V 40A ISOTOP
8,946
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
800V
40A (Tc)
10V
180mOhm @ 20A, 10V
4V @ 5mA
700nC @ 10V
±30V
14000pF @ 25V
-
690W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8075BN
Microsemi
MOSFET N-CH 800V 13A TO247AD
2,718
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
750mOhm @ 6.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT58MJ50J
Microsemi
MOSFET N-CH 500V 58A ISOTOP
7,632
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
500V
58A (Tc)
10V
65mOhm @ 42A, 10V
5V @ 2.5mA
340nC @ 10V
±30V
13500pF @ 25V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M07JVR
Microsemi
MOSFET N-CH 100V 225A ISOTOP
7,866
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
100V
225A (Tc)
10V
-
4V @ 5mA
1050nC @ 10V
±30V
21600pF @ 25V
-
700W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M11JVR
Microsemi
MOSFET N-CH 100V 144A ISOTOP
7,452
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
100V
144A (Tc)
10V
-
4V @ 2.5mA
450nC @ 10V
±30V
10300pF @ 25V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT4012BVR
Microsemi
MOSFET N-CH 400V 37A TO247AD
2,952
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
4V @ 1mA
290nC @ 10V
±30V
5400pF @ 25V
-
370W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT4012BVRG
Microsemi
MOSFET N-CH 400V 37A TO247AD
8,442
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
4V @ 1mA
290nC @ 10V
±30V
5400pF @ 25V
-
370W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT12080JVR
Microsemi
MOSFET N-CH 1200V 15A ISOTOP
2,322
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
1200V
15A (Tc)
10V
800mOhm @ 7.5A, 10V
4V @ 2.5mA
485nC @ 10V
±30V
7800pF @ 25V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5014B2VRG
Microsemi
MOSFET N-CH 500V T-MAX
2,160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT4016BVRG
Microsemi
MOSFET N-CH 400V TO-247
6,336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT130SM70B
Microsemi
MOSFET N-CH 700V TO247
8,262
-
N-Channel
SiCFET (Silicon Carbide)
700V
110A (Tc)
20V
45mOhm @ 60A, 20V
2.4V @ 1mA
220nC @ 20V
+25V, -10V
3950pF @ 700V
-
556W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT130SM70J
Microsemi
MOSFET N-CH 700V SOT227
6,390
-
N-Channel
SiCFET (Silicon Carbide)
700V
78A (Tc)
20V
45mOhm @ 60A, 20V
2.4V @ 1mA
270nC @ 20V
+25V, -10V
3950pF @ 700V
-
273W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT35SM70B
Microsemi
MOSFET N-CH 700V TO247
6,390
-
N-Channel
SiCFET (Silicon Carbide)
700V
35A (Tc)
20V
145mOhm @ 10A, 20V
2.5V @ 1mA
67nC @ 20V
+25V, -10V
1035pF @ 700V
-
176W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT35SM70S
Microsemi
MOSFET N-CH 700V D3PAK
8,766
-
-
SiCFET (Silicon Carbide)
700V
35A
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
APT5SM170B
Microsemi
MOSFET N-CH 700V TO247
5,436
-
N-Channel
SiCFET (Silicon Carbide)
1700V
5A (Tc)
20V
1.25Ohm @ 2.5A, 20V
3.2V @ 500µA
21nC @ 20V
+25V, -10V
249pF @ 1000V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3