整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 117/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
16,776 |
|
- | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
35,730 |
|
- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 30A TO247 |
7,260 |
|
- | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 26A TO247AD |
22,872 |
|
- | Standard | 1200V | 26A | 2.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SC SCHKY 650V 6A TO220ACP |
19,320 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
13,392 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
18,252 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
33,258 |
|
- | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO252AA |
14,748 |
|
- | Standard | 1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO252AA |
7,140 |
|
- | Standard | 400V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 40A TO247 |
88,380 |
|
- | Standard | 1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
26,538 |
|
- | Standard | 600V | 8A | 3.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 18A TO247 |
10,608 |
|
Stealth™ | Standard | 1200V | 18A | 3.3V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 30A TO247AD |
6,420 |
|
HiPerFRED™ | Standard | 600V | 30A | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6,912 |
|
- | Standard | 600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
16,884 |
|
FRED Pt® | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 29ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
9,096 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 80A TO247 |
22,884 |
|
- | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
204 |
|
- | Standard | 1200V | 60A | 1.3V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
7,578 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
IXYS |
DIODE AVALANCHE 1.8KV 2.3A |
2,958 |
|
- | Avalanche | 1800V | 2.3A | 1.34V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1800V | - | Through Hole | Radial | - | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
274 |
|
- | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO220FM |
26,292 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3 |
7,524 |
|
- | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
9,888 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 1200V | 60A | 1.3V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 75A DO247 |
7,301 |
|
- | Standard | 1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 50µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 200V 69A TO247AD |
16,296 |
|
- | Standard | 200V | 69A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 8A TO220-2 |
14,844 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GP 600V 30A ISOPLUS247 |
7,404 |
|
HiPerFRED™ | Standard | 600V | 30A | 2.51V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 250µA @ 600V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 60A TO247 |
6,318 |
|
- | Standard | 400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 37ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |