整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 23/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 400V 20A D2PAK |
309,294 |
|
- | Standard | 400V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 8A POWERMITE3 |
41,856 |
|
- | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 60V 30A D2PAK |
509 |
|
- | Schottky | 60V | 30A | 615mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 135µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 1A SMA |
276,690 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 10A TO220-2 |
101,376 |
|
SWITCHMODE™ | Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A TO263AB |
60,138 |
|
TMBS® | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 1000V 3A SMC |
27,918 |
|
- | Standard | 1000V | 3A | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO263AB |
44,544 |
|
TMBS® | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-F2 |
432,037 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 4A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 120pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 1A TO252-2 |
119,592 |
|
Zero Recovery™ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 80pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 60V 30A POWERFLAT |
42,114 |
|
- | Schottky | 60V | 30A | 720mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 60V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 800V 8A TO220AC |
13,992 |
|
SWITCHMODE™ | Standard | 800V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 250V 40A D2PAK |
2 |
|
SWITCHMODE™ | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 250V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 30A TO263 |
35,004 |
|
- | Standard | 1200V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1200V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.5KV 10A TO220F |
44,556 |
|
- | Standard | 1500V | 10A | 1.6V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 10µA @ 1500V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 20A D2PAK |
56,190 |
|
- | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220F |
54,324 |
|
Stealth™ | Standard | 600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO252-2 |
21,804 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A D2PAK |
147,300 |
|
- | Schottky | 100V | 20A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 15A TO220AC |
47,923 |
|
- | Standard | 1200V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 9A TO252-2 |
23,304 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 3A TO252-2 |
28,662 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 11A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 155pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3.5A DPAK |
98,712 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
24,036 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
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|
Power Integrations |
DIODE GEN PURP 300V 30A TO220AC |
22,884 |
|
Qspeed™ | Standard | 300V | 30A | 1.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 13.7ns | 250µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 30A D2PAK |
12,030 |
|
- | Standard | 200V | 30A | 1.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 50A D2PAK |
25,020 |
|
- | Schottky | 45V | 50A | 610mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 360µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 200°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
13,620 |
|
- | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A D2PAK |
116,202 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 5A TO252-2 |
47,910 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 1200V | 301pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |