整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 25/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7,922 |
|
- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 600V 30A DOP3I |
24,978 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
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|
Infineon Technologies |
DIODE SCHOTKY 650V 10A TO220-2-1 |
19,116 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO263-2 |
59,970 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 29A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO220-2 |
31,236 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 30A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 32A TO252-2 |
44,586 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 32A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 460.5pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO220AC |
56,334 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 400V 60A DO247 |
15,726 |
|
- | Standard | 400V | 60A | 1.2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 5A TO252-2 |
54,942 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8.2A TO220 |
17,826 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 75A TO247AD |
1 |
|
- | Standard | 1200V | 75A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 3mA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 1KV 60A DO247 |
29,784 |
|
- | Standard | 1000V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
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|
IXYS |
DIODE GEN PURP 1.8KV 40A TO247AD |
6,264 |
|
SONIC-FRD™ | Standard | 1800V | 40A | 2.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1800V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
17,580 |
|
- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO220AC |
33,894 |
|
- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACFP | 175°C (Max) |
|
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|
Microsemi |
DIODE SCHOTTKY 200V 120A TO247 |
56,868 |
|
- | Schottky | 200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3,622 |
|
- | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 150A POWIRTAB |
25,026 |
|
- | Standard | 400V | 150A | 1.3V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 93ns | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 75MA DO35 |
17,147 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
|
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO220FM |
2 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
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|
Microsemi |
DIODE GEN PURP 150V 1A D5A |
7,748 |
|
- | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
275 |
|
- | Standard, Reverse Polarity | 100V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
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|
IXYS |
DIODE GEN PURP 1.8KV 63A TO247AD |
2 |
|
- | Standard | 1800V | 63A | 4.1V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2mA @ 1800V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
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|
IXYS |
DIODE GEN PURP 1.8KV 60A TO247AD |
23,100 |
|
- | Standard | 1800V | 60A | 2.04V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | 200µA @ 1800V | 32pF @ 1200V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
25,902 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8A TO252-2 |
22,758 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 3V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 75V 300MA D5D |
16,554 |
|
- | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
16,775 |
|
Automotive, AEC-Q101 | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
15,936 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 15V 150MA DO35 |
43 |
|
- | Standard | 15V | 150mA (DC) | 1.07V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10pA @ 15V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |