整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 237/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODES - D-PAK-E3 |
2,772 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 5A IPAK |
15,295 |
|
- | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 600V 4A DPAK |
5,130 |
|
- | Silicon Carbide Schottky | 600V | 4A | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 200pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 40A TO263AB |
18,744 |
|
- | Schottky | 45V | 40A (DC) | 670mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 200°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D-PAK-E3 |
7,650 |
|
Automotive, AEC-Q101 | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
14,880 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 2A SMA |
8,712 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 3A SMC |
5,310 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 200V 3A POWERDI5 |
7,362 |
|
Automotive, AEC-Q101 | Schottky | 200V | 3A | 880mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
12,522 |
|
FRED Pt® | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 5A DPAK |
4,356 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 3.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A D2PAK |
3,598 |
|
- | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
Littelfuse |
DIODE GEN PURP 400V 9.5A TO220 |
28,860 |
|
- | Standard | 400V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | - | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | -40°C ~ 125°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
18,984 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
107,310 |
|
FRED Pt® | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A DO214AA |
25,488 |
|
- | Silicon Carbide Schottky | 650V | 1A (DC) | 2V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 6.5V | 76pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 8A D2PAK |
19,284 |
|
- | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC |
12,456 |
|
- | Standard | 600V | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 60µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 3A POWERMITE3 |
2,034 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
IXYS |
DIODE GEN PURP 1.6KV 30A TO263 |
4,698 |
|
- | Standard | 1600V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1600V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 15V 20A D2PAK |
14,748 |
|
- | Schottky | 15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 15V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-2 |
22,824 |
|
- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 6A DPAK |
6,390 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 300pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A D2PAK |
23,892 |
|
- | Schottky | 100V | 30A | 870mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 45µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 3A POWERMITE |
2,952 |
|
- | Schottky | 100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 85pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 5A DO214AB |
6,156 |
|
- | Schottky | 60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 20A LPDS |
23,760 |
|
- | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A TO220AC |
33,960 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 6A D2PAK |
14,154 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 300pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
|
|
|
Littelfuse |
DIODE GEN PURP 1.2KV 30A TO220AB |
12,402 |
|
DUR | Standard | 1200V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 1200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |