整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 330/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 20V 500MA SOD523 |
4,122 |
|
- | Schottky | 20V | 500mA | 510mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.4ns | 30µA @ 10V | 7pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT723 |
7,110 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SOT-723 | SOT-723 | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
4,914 |
|
Automotive, AEC-Q101 | Schottky | 40V | 30mA | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
5,148 |
|
Automotive, AEC-Q101 | Schottky | 40V | 30mA | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
5,562 |
|
- | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 700MA 3CP |
7,470 |
|
- | Schottky | 30V | 700mA | 550mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 80µA @ 15V | 25pF @ 10V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP | -55°C ~ 125°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO204AL |
8,028 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO204AL |
8,226 |
|
Automotive, AEC-Q101 | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A DO204AL |
8,208 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A DO204AL |
5,202 |
|
Automotive, AEC-Q101 | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A TS-1 |
2,862 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO204AC |
8,082 |
|
- | Standard | 50V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO204AC |
7,452 |
|
Automotive, AEC-Q101 | Standard | 50V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO204AC |
4,140 |
|
- | Standard | 100V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO204AC |
2,970 |
|
Automotive, AEC-Q101 | Standard | 100V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO204AC |
3,294 |
|
- | Standard | 200V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO204AC |
3,114 |
|
Automotive, AEC-Q101 | Standard | 200V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO204AC |
5,058 |
|
- | Standard | 400V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO204AC |
7,596 |
|
Automotive, AEC-Q101 | Standard | 400V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO204AC |
2,718 |
|
- | Standard | 600V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO204AC |
5,670 |
|
Automotive, AEC-Q101 | Standard | 600V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
3,312 |
|
- | Standard | 50V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO204AC |
2,520 |
|
- | Standard | 100V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
3,762 |
|
- | Standard | 200V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 200MA SOT323 |
5,652 |
|
- | Schottky | 40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | 125°C (Max) |
|
|
|
Nexperia |
DIODE SCHOTTKY 60V 1A DSN1006-2 |
4,230 |
|
- | Schottky | 60V | 1A | 730mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 2.4ns | 30µA @ 60V | 20pF @ 10V, 1MHz | Surface Mount | 2-XDFN | DSN1006-2 | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 800MA SUBSMA |
4,446 |
|
- | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
3,546 |
|
- | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 800MA SUBSMA |
8,100 |
|
- | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 800MA SUBSMA |
2,322 |
|
- | Standard | 100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |