Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

整流器-單

Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
Loading...
重置
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 332/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
S1D-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 200V DO-214AC
7,758
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 200V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1G-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 400V DO-214AC
2,772
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1K-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 800V DO-214AC
3,096
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1M-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 1000V DO-214AC
5,508
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BAS283-GS18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 30MA SOD80
3,762
Automotive, AEC-Q101
Schottky
60V
30mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 200V
1.6pF @ 1V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
BAS83-GS18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 30MA SOD80
7,092
Automotive, AEC-Q101
Schottky
60V
30mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 60V
1.6pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
LS101B-GS18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
3,402
Automotive, AEC-Q101
Schottky
50V
30mA
950mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
BAS283-GS08
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 30MA SOD80
3,294
Automotive, AEC-Q101
Schottky
60V
30mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 200V
1.6pF @ 1V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
LS101B-GS08
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
8,028
Automotive, AEC-Q101
Schottky
50V
30mA
950mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
1N4007 TR
Central Semiconductor Corp
DIODE GEN PURP 1KV 1A DO41
6,606
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
8,460
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
RS1AL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
3,564
-
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ALHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
8,586
Automotive, AEC-Q101
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
3,996
-
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
3,580
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
4,680
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
7,704
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
2,862
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
6,840
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
3,996
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
6,228
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
3,222
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
4,500
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
7,416
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
4,158
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
6,660
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
7,776
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
6,480
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
7,560
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SBRS5641T3G
ON Semiconductor
DIODE SCHOTTKY SMB
5,076
*
-
-
-
-
-
-
-
-
-
-
-
-