整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 482/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SMB |
4,950 |
|
FRED Pt® | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
7,794 |
|
eSMP® | Standard | 100V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
6,516 |
|
eSMP® | Standard | 200V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
2,160 |
|
eSMP® | Standard | 400V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
4,806 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
4,338 |
|
Automotive, AEC-Q101 | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 6A R-6 |
7,902 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
3,060 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
5,814 |
|
Automotive, AEC-Q101 | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
5,742 |
|
- | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
8,910 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
4,662 |
|
- | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
7,686 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
5,130 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
5,904 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
2,196 |
|
- | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
3,294 |
|
Automotive, AEC-Q101 | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
8,370 |
|
- | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
7,830 |
|
- | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
2,250 |
|
- | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN |
5,094 |
|
- | Schottky | 45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
2,682 |
|
SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 380µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A DO214AB |
6,372 |
|
- | Standard | 400V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A DO214AB |
4,752 |
|
- | Standard | 600V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 3A DO201AD |
8,946 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
5,076 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
20,384 |
|
- | Schottky | 60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
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Comchip Technology |
DIODE SCHOTTKY 200V 5A DO214AC |
4,572 |
|
- | Schottky | 200V | 5A (DC) | 900mV @ 5mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
5,022 |
|
- | Standard | 600V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
6,930 |
|
- | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |