整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 492/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
5,400 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
5,202 |
|
- | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
4,554 |
|
- | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
8,982 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
4,410 |
|
- | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
5,652 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
2,178 |
|
- | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
4,914 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.5A SOD57 |
6,516 |
|
- | Avalanche | 50V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
7,092 |
|
- | Avalanche | 100V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
4,788 |
|
- | Avalanche | 400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
8,190 |
|
- | Avalanche | 200V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.5A SOD57 |
3,420 |
|
- | Avalanche | 50V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A SOD57 |
7,596 |
|
- | Avalanche | 100V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
3,438 |
|
- | Avalanche | 400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
4,968 |
|
- | Avalanche | 200V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC |
7,848 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 760mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 100V | 850pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
6,786 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 870mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 120V | 700pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 8A DO221BC |
3,024 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 510pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 8A DO221BC |
4,554 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 8A | 630mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | 1030pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
3,600 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 880mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | 730pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AB |
3,294 |
|
- | Standard | 300V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
7,992 |
|
Automotive, AEC-Q101 | Standard | 50V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
4,428 |
|
Automotive, AEC-Q101 | Standard | 100V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
5,922 |
|
Automotive, AEC-Q101 | Standard | 150V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
7,074 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE GEN PURP 600V 4A TO220AC |
8,910 |
|
- | Standard | 600V | 4A | 1.55V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 600V 5A ITO220AC |
2,142 |
|
- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A DO214AB |
5,976 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AA |
4,950 |
|
Automotive, AEC-Q101 | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |