整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 511/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
5,814 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN |
8,496 |
|
Automotive, AEC-Q101 | Schottky | 45V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 300pF @ 45V, 1MHz | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 200V 5A DO27 |
5,382 |
|
- | Schottky | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
4,248 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AB |
6,624 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 4A 10V SMB2 |
4,356 |
|
Automotive, AEC-Q101 | Schottky | 10V | 4A | 330mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 10V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 3A DO214AB |
3,456 |
|
- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5,004 |
|
Automotive, AEC-Q101 | Standard | 200V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
8,442 |
|
Automotive, AEC-Q101 | Standard | 400V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A DO214AB |
4,410 |
|
Automotive, AEC-Q101 | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 10A DO214AB |
3,852 |
|
Automotive, AEC-Q101 | Standard | - | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
2,574 |
|
Automotive, AEC-Q101 | Standard | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 5A DO201AD |
3,960 |
|
- | Schottky | 20V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO201AD |
6,858 |
|
- | Schottky | 30V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 3A POWERDI5 |
2,970 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 3A | 620mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 3A POWERDI5 |
8,568 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 3A | 620mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.5A DO220 |
7,974 |
|
eSMP® | Avalanche | 800V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 800V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO220 |
4,680 |
|
eSMP® | Avalanche | 1000V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 1000V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 520V 5A DPAK |
3,276 |
|
SWITCHMODE™ | Standard | 520V | 5A | 1.15V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A M-FLAT |
3,276 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
6,588 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 120V 10A 5DFN |
3,330 |
|
Automotive, AEC-Q101 | Schottky | 120V | 10A | 820mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 10A 5DFN |
8,874 |
|
Automotive, AEC-Q101 | Schottky | 120V | 10A | 820mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GP 200V 200MA SOT23-3 |
4,212 |
|
- | Standard | 200V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 50V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 500MA DO204 |
8,820 |
|
SUPERECTIFIER® | Standard | 1400V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 500MA DO204 |
6,336 |
|
SUPERECTIFIER® | Standard | 1500V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1500V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 2A DO214AC |
6,966 |
|
- | Schottky | 40V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 125°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE |
3,438 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | 80pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE |
2,502 |
|
- | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A POWERMITE |
2,016 |
|
- | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |