整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 522/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AB |
3,454 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AB |
8,424 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 5A SMC |
3,834 |
|
Automotive, AEC-Q101 | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 5A SMC |
5,076 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 5A SMC |
7,578 |
|
Automotive, AEC-Q101 | Schottky | 50V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 6A DO201AD |
7,254 |
|
Automotive, AEC-Q101 | Standard | 150V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A DO201AD |
3,006 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 4A DO201AD |
6,444 |
|
Automotive, AEC-Q101 | Standard | 300V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2,100 |
|
Automotive, AEC-Q101 | Standard | 400V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SUPER BARRIER RECTIFIER PDI5 |
3,330 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
4,536 |
|
- | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
7,920 |
|
- | Standard | 400V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
2,016 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
3,528 |
|
FRED Pt® | Standard | 600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
3,528 |
|
FRED Pt® | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SBR 100V 250MA 2DFN |
6,354 |
|
Automotive, AEC-Q101 | Super Barrier | 100V | 250mA | 800mV @ 200mA | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 75V | - | Surface Mount | 0402 (1006 Metric) | X1-DFN1006-2 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.6A TO277A |
7,722 |
|
Automotive, AEC-Q101 | Schottky | 120V | 3.6A (DC) | 620mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 8A 120V TO-277A |
6,048 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201 |
8,748 |
|
- | Standard | 1000V | 2.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
4,752 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
3,582 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
7,434 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
8,730 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
RECTIFIER 200V 6A |
6,444 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 10A DPAK |
6,354 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 1.5K |
4,842 |
|
- | Schottky | 100V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 1.5K |
7,596 |
|
- | Schottky | 100V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
3,474 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 200V 3A DO214AB |
3,562 |
|
- | Schottky | 200V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 800V 8A TO277-3 |
6,948 |
|
Automotive, AEC-Q101 | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | 3.37µs | 5µA @ 800V | 118pF @ 0V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |