整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 523/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
5,760 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2,520 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
8,244 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
8,118 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
6,390 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 2A PMDS |
4,338 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 400V SOD-57 |
3,330 |
|
- | Avalanche | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 600V SOD-57 |
6,012 |
|
- | Avalanche | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 800V SOD-57 |
5,976 |
|
- | Avalanche | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 1000V SOD-57 |
2,682 |
|
- | Avalanche | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 400V SOD-57 |
3,546 |
|
- | Avalanche | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 76pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 600V SOD-57 |
7,218 |
|
- | Avalanche | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 800V SOD-57 |
6,030 |
|
- | Avalanche | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A DO214AB |
8,658 |
|
- | Standard | 400V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A DO214AB |
2,358 |
|
- | Standard | 600V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A DO214AB |
5,940 |
|
- | Standard | 400V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
7,524 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 750mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
2,268 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 750mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
6,804 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
5,256 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
5,922 |
|
- | Standard | 100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
5,022 |
|
- | Standard | 150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
3,562 |
|
- | Standard | 200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
6,750 |
|
- | Standard | 100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
8,802 |
|
- | Standard | 150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
3,762 |
|
- | Standard | 200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 1A 100V POWERMITE |
6,768 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Microsemi |
DIODE SCHOTTKY 1A 30V POWERMITE |
3,490 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 70V POWERMITE |
8,226 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1A 80V POWERMITE |
3,420 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |