整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 555/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
6,822 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
3,096 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
2,412 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
6,264 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
4,950 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
2,448 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
4,122 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
6,984 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
2,880 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
5,292 |
|
SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
3,870 |
|
SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO201AD |
2,160 |
|
SUPERECTIFIER® | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 12A DO201AD |
2,700 |
|
- | Schottky | 45V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 12A DO201AD |
6,120 |
|
- | Schottky | 60V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AC |
6,084 |
|
- | Standard | 50V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 8A TO220AC |
8,406 |
|
- | Standard | 100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
2,016 |
|
- | Standard | 200V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 8A TO220AC |
6,426 |
|
- | Standard | 300V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
4,788 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
6,804 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 600V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A TO220AC |
3,312 |
|
- | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 35V 16A TO220AC |
3,258 |
|
- | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 16A TO220AC |
2,304 |
|
- | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 16A TO220AC |
4,914 |
|
- | Schottky | 50V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A TO220AC |
6,012 |
|
- | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 16A TO220AC |
3,366 |
|
- | Schottky | 90V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AC |
6,534 |
|
- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V ITO-220A |
4,068 |
|
- | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A SMPC4.0 |
2,178 |
|
- | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
2,268 |
|
Automotive, AEC-Q101 | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |