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整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 607/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向（Vr）（最大值）
電流-平均整流（Io）
電壓-正向（Vf）（最大值）@如果
速度
反向恢復時間（trr）
當前-反向泄漏@ Vr
電容@ Vr，F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
1N646
Microsemi
SILICON SWITCHING DIODES
4,590
*
-
-
-
-
-
-
-
-
-
-
-
-
SD125SC150A.T1
SMC Diode Solutions
PIV 150V IO 15A CHIP SIZE 125MIL
7,704
*
-
-
-
-
-
-
-
-
-
-
-
-
SD125SC150B.T1
SMC Diode Solutions
PIV 150V IO 15A CHIP SIZE 125MIL
7,110
*
-
-
-
-
-
-
-
-
-
-
-
-
SD125SC200B.T1
SMC Diode Solutions
PIV 200V IO 15A CHIP SIZE 125MIL
5,346
*
-
-
-
-
-
-
-
-
-
-
-
-
SD125SCU100A.T1
SMC Diode Solutions
PIV 100V IO 15A CHIP SIZE 125MIL
8,892
*
-
-
-
-
-
-
-
-
-
-
-
-
IDP12E120XKSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO220-2
4,698
-
Standard
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
DSEP8-06A
IXYS
DIODE GEN PURP 600V 10A TO220AC
3,834
HiPerFRED™
Standard
600V
10A
2.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
60µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
DSEP8-06B
IXYS
DIODE GEN PURP 600V 10A TO220AC
5,778
HiPerFRED™
Standard
600V
10A
2.66V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
60µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
LSM315J/TR13
Microsemi
DIODE SCHOTTKY 15V 3A DO214AB
2,646
-
Schottky
15V
3A
320mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 15V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 125°C
IDH03SG60CXKSA2
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO220-2
7,974
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDD04SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO252-3
6,714
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
2.3V @ 4A
No Recovery Time > 500mA (Io)
0ns
25µA @ 600V
80pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
QH08BZ600
Power Integrations
DIODE GEN PURP 600V 8A TO263AB
8,064
Qspeed™
Standard
600V
8A
3.15V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
11.1ns
250µA @ 600V
25pF @ 10V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
150°C (Max)
VS-20ETS08STRL-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 20A TO263AB
4,644
-
Standard
800V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 800V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
HSM120G/TR13
Microsemi
DIODE SCHOTTKY 1A 20V SMBG
2,916
*
-
-
-
-
-
-
-
-
-
-
-
-
HSM130G/TR13
Microsemi
DIODE SCHOTTKY 1A 30V SMBG
8,442
*
-
-
-
-
-
-
-
-
-
-
-
-
HSM140G/TR13
Microsemi
DIODE SCHOTTKY 1A 40V SMBG
6,804
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-20ETS12STRL-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
5,220
-
Standard
1200V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
VS-20ETS12STRR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
6,894
-
Standard
1200V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
VS-HFA25TB60SL-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 25A D2PAK
5,202
HEXFRED®
Standard
600V
25A (DC)
2V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
VS-HFA25TB60SR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 25A D2PAK
3,096
HEXFRED®
Standard
600V
25A (DC)
2V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
DPG10I400PM
IXYS
DIODE GEN PURP 400V 10A TO220FP
5,400
HiPerFRED²™
Standard
400V
10A
1.32V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
1µA @ 400V
-
Through Hole
TO-220-2 Full Pack
TO-220FP
-55°C ~ 175°C
DHG10I600PM
IXYS
DIODE GEN PURP 600V 10A TO220FP
8,730
-
Standard
600V
10A
2.35V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
15µA @ 600V
-
Through Hole
TO-220-3 Full Pack
TO-220FPAB
-55°C ~ 150°C
DSEI8-06AS-TUB
IXYS
DIODE GEN PURP 600V 8A TO263AB
7,776
FRED
Standard
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
DSS16-0045A
IXYS
DIODE SCHOTTKY 45V 16A TO-220AC
8,442
-
Schottky
45V
16A
670mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-
HSM150G/TR13
Microsemi
DIODE SCHOTTKY 50V 1A DO215AA
7,938
-
Schottky
50V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 175°C
HSM160G/TR13
Microsemi
DIODE SCHOTTKY 60V 1A DO215AA
4,572
-
Schottky
60V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 175°C
HSM170G/TR13
Microsemi
DIODE SCHOTTKY 1A 70V SMBG
8,586
*
-
-
-
-
-
-
-
-
-
-
-
-
DMA10I1600PA
IXYS
DIODE GEN PURP 1600V 10A TO220AC
8,982
-
Standard
1600V
10A
1.26V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1600V
4pF @ 400V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SIDC06D120H8X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
8,226
-
Standard
1200V
7.5A (DC)
1.97V @ 7.5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
CDLL4153
Microsemi
DIODE GEN PURP 75V 150MA DO213AA
2,376
-
Standard
75V
150mA
880mV @ 20mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C