整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 848/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
7,956 |
|
- | Standard | 1200V | 25A (DC) | 2.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
6,282 |
|
- | Standard | 1200V | 35A (DC) | 1.6V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
3,402 |
|
- | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
2,394 |
|
- | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SILICON 300V 10A WAFER |
4,212 |
|
- | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER |
6,336 |
|
- | Standard | 600V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
5,724 |
|
- | Standard | 1200V | 35A (DC) | 1.9V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
5,670 |
|
- | Standard | 1200V | 35A (DC) | 2.1V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
6,480 |
|
- | Standard | 1200V | 50A (DC) | 1.6V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 75A WAFER |
3,294 |
|
- | Standard | 600V | 75A (DC) | 1.25V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER |
4,392 |
|
- | Standard | 1700V | 50A (DC) | 1.8V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER |
3,042 |
|
- | Standard | 600V | 150A (DC) | 1.9V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
8,370 |
|
- | Standard | 1200V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
8,298 |
|
- | Standard | 1200V | 50A (DC) | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
6,552 |
|
- | Standard | 1200V | 75A (DC) | 1.6V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER |
7,128 |
|
- | Standard | 1700V | 50A (DC) | 2.15V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER |
4,806 |
|
- | Standard | 600V | 100A (DC) | 1.25V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER |
6,840 |
|
- | Standard | 1700V | 75A (DC) | 1.8V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER |
3,654 |
|
- | Standard | 600V | 200A (DC) | 1.9V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
2,232 |
|
- | Standard | 1200V | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
2,700 |
|
- | Standard | 1200V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
6,966 |
|
- | Standard | 1200V | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER |
6,120 |
|
- | Standard | 1700V | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER |
6,570 |
|
- | Standard | 600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
8,982 |
|
- | Standard | 1700V | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
4,662 |
|
- | Standard | 1700V | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER |
8,640 |
|
- | Standard | 1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
5,724 |
|
- | Standard | 1200V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
2,286 |
|
- | Standard | 1200V | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
3,744 |
|
- | Standard | 1200V | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |