整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 875/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
7,452 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO220-2 |
2,808 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 360µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 2A TO220-2FP |
4,824 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 2A (DC) | 1.9V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2FP |
2,772 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.9V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 90pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD |
5,742 |
|
- | Standard | 1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
5,382 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 150°C (Max) |
|
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 30V 1A SMINI2 |
7,398 |
|
- | Schottky | 30V | 1A | 420mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 13ns | 100µA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Smini2-F2 | 125°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 20A DPAK |
2,592 |
|
- | Standard | 200V | 20A | 1.15V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -65°C ~ 150°C |
|
|
|
IXYS |
DIODE SCHOTTKY 180V 15A TO263AB |
6,390 |
|
- | Schottky | 180V | 15A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 180V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE SCHOTTKY 180V 23A TO263AB |
3,078 |
|
- | Schottky | 180V | 23A | 1V @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 180V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.4KV Y1-CU |
8,100 |
|
- | Standard | 1400V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
IXYS |
DIODE GEN PURP 1.6KV Y1-CU |
3,870 |
|
- | Standard | 1600V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
IXYS |
DIODE GEN PURP 1.8KV Y1-CU |
3,510 |
|
- | Standard | 1800V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
IXYS |
DIODE GEN PURP 2KV Y1-CU |
6,570 |
|
- | Standard | 2000V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
IXYS |
DIODE GEN PURP 2.2KV Y1-CU |
7,218 |
|
- | Standard | 2200V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Y1-CU | Y1-CU | - |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220FP |
5,526 |
|
- | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A I2PAK |
8,604 |
|
- | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220FP |
5,274 |
|
- | Schottky | 100V | 30A | 870mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 45µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7,848 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8,370 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2,268 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
8,154 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
7,722 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
8,730 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
7,362 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
7,290 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
4,698 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
5,202 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8,964 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3,510 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |