內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 480/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
3,474 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
3,402 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II |
8,172 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 667MHZ |
4,896 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
2,466 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
5,958 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 86TSOP II |
2,178 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
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|
Cypress Semiconductor |
IC FLASH 512M SPI 80MHZ |
8,064 |
|
Automotive, AEC-Q100, FS-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI | 80MHz | - | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP |
8,928 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
Micron Technology Inc. |
IC FLASH 512M PARALLEL 56TSOP |
2,988 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 105ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
|
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|
Micron Technology Inc. |
IC FLASH 512M PARALLEL 56TSOP |
4,194 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 105ns | 1.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
|
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|
Micron Technology Inc. |
IC FLASH 512M PARALLEL 64LBGA |
4,068 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 105ns | 1.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
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Micron Technology Inc. |
IC FLASH 512M PARALLEL 64LBGA |
2,784 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 105ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
|
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|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60VFBGA |
6,066 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 60-VFBGA | 60-VFBGA (8x9) |
|
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|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 166MHZ |
2,736 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 60-VFBGA | 60-VFBGA (8x9) |
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
5,724 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
4,122 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
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Cypress Semiconductor |
IC FLASH 256M PARALLEL 100MHZ |
3,150 |
|
Automotive, AEC-Q100, HyperFlash™ KL | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | Parallel | 100MHz | - | 96ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA |
2,088 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA |
3,870 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
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Micron Technology Inc. |
IC DRAM 256M PARALLEL 60FBGA |
8,298 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
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Micron Technology Inc. |
IC DRAM 256M PARALLEL 60FBGA |
6,480 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
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Micron Technology Inc. |
IC DRAM 256M PARALLEL 60FBGA |
2,358 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL WAFER |
6,048 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | - | - | - |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
2,430 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
4,230 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
8,676 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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Cypress Semiconductor |
IC NOR |
8,586 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
3,366 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 256Mb (8M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP |
2,736 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |