內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 85/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GigaDevice Semiconductor (HK) Limited |
SLC NAND FLASH |
7,560 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Gb (128M x 8) | - | - | - | - | 2.7V ~ 3.6V | - | Surface Mount | 48-TFSOP (0.173", 4.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 63TFBGA |
4,162 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 63TFBGA |
26,490 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 48TSOP I |
3,522 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 48TSOP I |
14,410 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Winbond Electronics |
IC DRAM 1G PARALLEL 60WBGA |
6,432 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 200MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-WBGA (8x12.5) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 128M SPI 133MHZ 16SOIC |
16,512 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Micron Technology Inc. |
IC FLASH 1G PARALLEL 63VFBGA |
4,967 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Gb (128M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
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|
Insignis Technology Corporation |
IC SDRAM 128MBIT 166MHZ 86TSOP |
17,880 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | - | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 128M SPI 24TFBGA |
17,328 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | 1ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
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Alliance Memory, Inc. |
32M PSRAM 48 BGA 3V |
8,232 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 32Mb (2M x 16) | Parallel | - | 70ns | 70ns | 2.6V ~ 3.3V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-FBGA (6x7) |
|
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|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
20,748 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Cypress Semiconductor |
IC FLASH 1G PARALLEL 63BGA |
18,240 |
|
ML-1 | Non-Volatile | FLASH | FLASH - NAND | 1Gb (128M x 8) | Parallel | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | 63-BGA (11x9) |
|
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|
Microchip Technology |
IC FLASH 16M PARALLEL 48TFBGA |
32,665 |
|
SST39 MPF™ | Non-Volatile | FLASH | FLASH | 16Mb (1M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
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|
Insignis Technology Corporation |
IC SDRAM 1GBIT 933MHZ 78BGA |
23,040 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (8x10.5) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 128M SPI 24TFBGA |
8,316 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 128M SPI 24TFBGA |
9,588 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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Cypress Semiconductor |
IC 128 MB FLASH MEMORY |
30,906 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Cypress Semiconductor |
IC 128 MB FLASH MEMORY |
30,186 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (5x6) |
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Cypress Semiconductor |
IC 128 MB FLASH MEMORY |
25,254 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Insignis Technology Corporation |
IC SDRAM 1GBIT 533MHZ 84BGA |
25,860 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 533MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
|
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|
Alliance Memory, Inc. |
IC DRAM 128M PARALLEL 60TFBGA |
7,452 |
|
- | Volatile | DRAM | SDRAM - DDR | 128Mb (8M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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|
Winbond Electronics |
IC SDRAM 1GBIT 667MHZ 96BGA |
13,770 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | - | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-VFBGA (7.5x13) |
|
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Cypress Semiconductor |
IC FLASH 128M SPI 108MHZ 16SOIC |
30,138 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 108MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Microchip Technology |
IC EEPROM 1M SPI 20MHZ 8DIP |
8,916 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | SPI | 20MHz | 6ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Microchip Technology |
IC FLASH 16M PARALLEL 48TFBGA |
3,216 |
|
SST39 MPF™ | Non-Volatile | FLASH | FLASH | 16Mb (1M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA |
|
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Microchip Technology |
64MB 2.3V TO 3.6V SQI FLASH MEMO |
16,428 |
|
SST26 SQI® | Non-Volatile | FLASH | FLASH | 64Mb (8M x 8) | SPI - Quad I/O | 104MHz | 1.5ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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|
Microchip Technology |
IC EPROM 2M PARALLEL 32PLCC |
14,076 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 2Mb (256K x 8) | Parallel | - | - | 55ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) |
|
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Toshiba Memory America, Inc. |
IC FLASH 1G SPI 104MHZ 8WSON |
13,695 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | SPI - Quad I/O | 104MHz | - | 155µs | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
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Cypress Semiconductor |
IC FLASH 32M PARALLEL 64BGA |
1,065,420 |
|
GL-N | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |