內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 92/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Macronix |
S-NOR 512M |
11,016 |
|
MXSMIO™ | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, DTR | 166MHz | 60µs, 750µs | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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|
Alliance Memory, Inc. |
IC DRAM 2G 128MX16 LPDDR2 134BGA |
6,462 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
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|
ISSI, Integrated Silicon Solution Inc |
2G 1.5V DDR3 128MX16 1866MT 96 B |
8,172 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
Macronix |
IC FLASH 512M SPI 166MHZ |
3,529 |
|
MX25xxx45 - MXSMIO™ | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 166MHz | 60µs, 750µs | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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|
Cypress Semiconductor |
IC FLASH 1G PARALLEL 64BGA |
19,266 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
2G 1.5V DDR3 128MX16 1600MT 96 B |
6,024 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
6,024 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
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|
ISSI, Integrated Silicon Solution Inc |
4G 1.5V DDR3 256MX16 1600MT 96 B |
8,820 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
Cypress Semiconductor |
IC FLASH 512M SPI 133MHZ 16SOIC |
16,092 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Toshiba Memory America, Inc. |
IC FLASH 8G PARALLEL 67VFBGA |
6,528 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH 8G PARALLEL 48TSOP I |
5,706 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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|
ISSI, Integrated Silicon Solution Inc |
2G 1.5V DDR3 128MX16 1866MT 96 B |
7,812 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
ISSI, Integrated Silicon Solution Inc |
4G 1.35V DDR3L 256MX16 1600MT 96 |
8,226 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Toshiba Memory America, Inc. |
8GB V5.1 EMMC |
5,955 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | eMMC | - | - | - | - | -25°C ~ 85°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
|
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|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 134VFBGA |
21,660 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (64M x 16) | Parallel | 533MHz | - | - | 1.14V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
|
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|
Toshiba Memory America, Inc. |
8GB SLC NAND 24NM BGA 9X11 3.3V |
7,764 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
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Toshiba Memory America, Inc. |
IC FLASH 8G PARALLEL 48TSOP I |
7,128 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
19,596 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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|
ISSI, Integrated Silicon Solution Inc |
2G 1.5V DDR3 128MX16 1866MT 96 B |
7,164 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
17,106 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
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|
Micron Technology Inc. |
IC FLASH 512M PARALLEL 64LBGA |
12,348 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 105ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
|
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|
Cypress Semiconductor |
IC FLASH 512M SPI 133MHZ 16SOIC |
7,272 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSSOP |
22,014 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSSOP |
|
|
|
Cypress Semiconductor |
IC NOR |
26,448 |
|
Automotive, AEC-Q100, FS-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI | 80MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M SPI 133MHZ |
22,686 |
|
Automotive, AEC-Q100, FS-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M SPI 80MHZ |
19,440 |
|
Automotive, AEC-Q100, FS-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI | 80MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
13,602 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
Cypress Semiconductor |
IC NOR |
8,424 |
|
Automotive, AEC-Q100, FL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
7,344 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
12,042 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |