內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 95/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Insignis Technology Corporation |
EMMC 16GB 100BALL IT |
6,444 |
|
- | Non-Volatile | FLASH | FLASH - NAND (MLC) | 128Gb (16G x 8) | eMMC | 200MHz | - | - | 3.3V | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |
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|
Macronix |
IC FLASH SERIAL NOR 2GBIT |
7,212 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 24-TBGA, CSPBGA | 24-CSPBGA (6x8) |
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Alliance Memory, Inc. |
DDR3 1G X 8 78-BALL FBGA |
5,213 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (1G x 8) | Parallel | 933MHz | - | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (9x10.5) |
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Alliance Memory, Inc. |
8G DDR3L 512MX16 1.35V 96-BALL F |
7,992 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (512M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13.5) |
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Alliance Memory, Inc. |
DDR3 512M X 16 96-BALL FBGA |
7,320 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (512M x 16) | Parallel | 933MHz | - | 20ns | 1.275V ~ 1.425V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13.5) |
|
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|
Alliance Memory, Inc. |
DDR3 512M X 16 96-BALL FBGA |
7,614 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (512M x 16) | Parallel | 933MHz | - | 20ns | 1.275V ~ 1.425V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13.5) |
|
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|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
5,570 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
Toshiba Memory America, Inc. |
32GB V5.1 I TEMP EMMC |
6,947 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | eMMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
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Renesas Electronics America |
IC SRAM 32M PARALLEL 48FBGA |
7,236 |
|
- | Volatile | SRAM | SRAM | 32Mb (2M x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (7.5x8.5) |
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Cypress Semiconductor |
IC SRAM 16M PARALLEL 48VFBGA |
11,484 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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|
Cypress Semiconductor |
IC SRAM 16M PARALLEL 48TSOP I |
6,144 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Cypress Semiconductor |
IC NVSRAM 4M PARALLEL 44TSOP II |
29 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (256K x 16) | Parallel | - | 20ns | 20ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Toshiba Memory America, Inc. |
IC FLASH 32G PARALLEL 48TSOP I |
73 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 32Gb (4G x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Microchip Technology |
IC EEPROM 1M PARALLEL 32TSOP |
12,816 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.465", 11.80mm Width) | 32-TSOP |
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|
Microchip Technology |
IC EEPROM 1M PARALLEL 32TSOP |
14,280 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Toshiba Memory America, Inc. |
512GBIT V5.1 I TEMP EMMC |
274 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | eMMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
|
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Toshiba Memory America, Inc. |
128GB V5.1 EMMC (3D) |
7,044 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | eMMC | - | - | - | - | -25°C ~ 85°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
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Cypress Semiconductor |
IC NVSRAM 8M PARALLEL 44TSOP II |
6,408 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 8Mb (1M x 8) | Parallel | - | 20ns | 20ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Toshiba Memory America, Inc. |
IC FLASH 2T UFS 153VFBGA |
7,938 |
|
Consumer UFS | Non-Volatile | FLASH | FLASH - NAND | 2Tb (256G x 8) | UFS | - | - | - | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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Macronix |
IC FLASH 512MBIT |
6,822 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
IC EEPROM 256K PARALLEL 32LCC |
13 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 32-CLCC | 32-LCC (11.43x13.97) |
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Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
6,132 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 72Mb (2M x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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Microchip Technology |
IC EEPROM 1M PARALLEL 32LCC |
308 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 32-CLCC | 32-LCC (11.43x13.97) |
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Microchip Technology |
IC EEPROM 1M PARALLEL 32LCC |
6,216 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 32-CLCC | 32-LCC (11.43x13.97) |
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Microchip Technology |
IC EEPROM 4K I2C 1MHZ 8TSSOP |
74,370 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (512 x 8) | I²C | 1MHz | 5ms | - | 1.7V ~ 3.6V | -20°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 4K I2C 1MHZ 8SOIC |
50,742 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (512 x 8) | I²C | 1MHz | 5ms | - | 1.7V ~ 3.6V | -20°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 2K SPI 20MHZ 8UDFN |
34,056 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 20MHz | 5ms | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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Microchip Technology |
IC EEPROM 2K I2C 1MHZ 8TSSOP |
25,380 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | I²C | 1MHz | 5ms | - | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 4K SPI 20MHZ 8TSSOP |
13,140 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 20MHz | 5ms | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 4K SPI 20MHZ 8UDFN |
22,908 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 20MHz | 5ms | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |