晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 150/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
24,630 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 41A D2PAK |
35,502 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 35mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2535pF @ 25V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET NCH 700V 7.4A TO251 |
13,770 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CH 100V 5A DPAK |
24,114 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 6V, 10V | 85mOhm @ 4.6A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 1313pF @ 50V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 60V 75A D2PAK |
28,740 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 5V | 8mOhm @ 20A, 10V | 2.1V @ 1mA | 29.8nC @ 5V | ±10V | 4350pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Nexperia |
MOSFET N-CH 55V 75A D2PAK |
28,314 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 3093pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO251 |
29,574 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | ±30V | 362pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 1A TO251 |
17,772 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 10Ohm @ 500mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 250V 8A TO251 |
19,842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO251-3 |
12,318 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | ±20V | 120pF @ 500V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A TO251 |
77,814 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK |
17,010 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | ±20V | 2550pF @ 10V | - | 107W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET N-CH 200V 2.85A 8-SOIC |
24,054 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.85A (Ta) | 6V, 10V | 80mOhm @ 4A, 10V | 2V @ 250µA (Min) | 42nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO252 |
38,514 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 9.7A 8SOIC |
25,770 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 10V | 10.5mOhm @ 12.6A, 10V | 1.4V @ 250µA | 70nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
22,890 |
|
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6mOhm @ 40A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2150pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 4A POWERFLAT22 |
22,326 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 70mOhm @ 2A, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±20V | 408pF @ 25V | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (2x2) | 6-PowerWDFN |
|
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Infineon Technologies |
MOSFET N-CH 800V 3A TO251-3 |
14,004 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CH 800V 3A TO251-3 |
15,810 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK |
23,664 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 490pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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STMicroelectronics |
MOSFET N-CH 75V 40A DPAK |
107,124 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 40A (Tc) | 10V | 24mOhm @ 20A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1760pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Nexperia |
MOSFET N-CH 55V 100A D2PAK |
30,216 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 4.9mOhm @ 25A, 10V | 2.8V @ 1mA | 124nC @ 10V | ±16V | 7750pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 2.5A TO251-3 |
13,332 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | 150pF @ 500V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 2.5A TO251-3 |
14,346 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | 150pF @ 500V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Nexperia |
MOSFET N-CH 80V 90A D2PAK |
28,992 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 8.7mOhm @ 10A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3346pF @ 40V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Nexperia |
MOSFET N-CH 100V 68A D2PAK |
23,076 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 13.9mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 3195pF @ 50V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Rohm Semiconductor |
MOSFET N-CH 600V 4A CPT |
25,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Ta) | 10V | 1.8Ohm @ 2A, 10V | 4.5V @ 1mA | 11nC @ 10V | ±25V | 280pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
24,858 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.9mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | ±20V | 6200pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Nexperia |
MOSFET N-CH 30V D2PAK |
13,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.15V @ 1mA | 81nC @ 10V | ±20V | 4682pF @ 15V | - | 178W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO251 |
22,980 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.3Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 640pF @ 25V | - | 104W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |