晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 345/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 650V 150A PLUS264 |
4,824 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 150A (Tc) | 10V | 17mOhm @ 75A, 10V | 5.5V @ 8mA | 430nC @ 10V | ±30V | 20400pF @ 25V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 250V 90A TO-264 |
7,434 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 250V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640nC @ 10V | ±20V | 23000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 1050V 44A MAX247 |
2,070 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 5V @ 100µA | 175nC @ 10V | ±30V | 6600pF @ 100V | - | 625W (Tc) | -55°C ~ 150°C | Through Hole | MAX247™ | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 66A SOT-227 |
2,160 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5V @ 8mA | 195nC @ 10V | ±30V | 12700pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 100V 200A TO-264 |
6,138 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540nC @ 10V | ±20V | 23000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
FET N-CHANNEL |
3,114 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 4.6mOhm @ 105A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 24200pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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STMicroelectronics |
MOSFET N-CH 650V 93A MAX247 |
3,744 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 96A (Tc) | 10V | 22mOhm @ 47A, 10V | 5V @ 250µA | 350nC @ 10V | ±25V | 16870pF @ 100V | - | 625W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 88A ISOTOP |
4,590 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 88A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | ±25V | 8825pF @ 100V | - | 494W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP | SOT-227-4 |
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Microsemi |
MOSFET N-CH 800V 57A SOT-227 |
2,124 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 57A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 17550pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A |
4,500 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
8,550 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Rohm Semiconductor |
2.5V DRIVE NCH MOSFET |
3,258 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 350mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 200MA SSM |
6,750 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TA) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A USM |
5,652 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USM |
8,046 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23 |
7,650 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 120mOhm @ 2.8A, 4.5V | 1.2V @ 250µA | 5.5nC @ 4.5V | ±8V | 476pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CHAN 24V SOT23 |
2,214 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 1.8V, 4.5V | 62mOhm @ 4.2A, 4.5V | 1V @ 250µA | 6.3nC @ 4.5V | ±8V | 487pF @ 20V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CHAN 30V SOT23 |
4,878 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 95mOhm @ 3.8A, 10V | 2.1V @ 250µA | 3.1nC @ 4.5V | ±20V | 254pF @ 25V | - | 650mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92 |
2,736 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Rohm Semiconductor |
MOSFET P-CH 20V 700MA DFN1006 |
2,088 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.8V, 4.5V | 300mOhm @ 1.4A, 4.5V | 1V @ 100µA | - | ±8V | 100pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | DFN1006-3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A 6UDFN |
4,194 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CHAN 20V SOT23 |
8,046 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta), 5.9A (Tc) | 1.8V, 4.5V | 30mOhm @ 4A, 4.5V | 1V @ 250µA | 20nC @ 10V | ±8V | 735pF @ 10V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CHAN 20V TSOP6S |
5,598 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta), 8A (Tc) | 1.8V, 4.5V | 21mOhm @ 4A, 4.5V | 1V @ 250µA | 118nC @ 10V | ±8V | 4085pF @ 50V | - | 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 20V 4.5A SSOT-6 |
7,686 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 48mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | ±8V | 1160pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 3X3 DFN EP |
3,870 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 16.5mOhm @ 12A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±25V | 1180pF @ 15V | - | 4.1W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 60V 1.1A SOT23-3 |
3,348 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 4.5V, 10V | 230mOhm @ 3A, 10V | 2.5V @ 250µA | 4.3nC @ 10V | ±20V | 240pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A SC70-6 |
3,204 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Tc) | 4.5V, 10V | 290mOhm @ 2A, 10V | 2.5V @ 250µA | 5.4nC @ 4.5V | ±20V | 355pF @ 25V | - | 3.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6 |
7,974 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 2.5V, 10V | 20mOhm @ 6A, 10V | 1.5V @ 250µA | 72nC @ 10V | ±12V | 2140pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Infineon Technologies |
MOSFET P-CH 100V 360MA SC-59-3 |
2,646 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 360mA (Ta) | 4.5V, 10V | 1.8Ohm @ 360mA, 10V | 1V @ 170µA | 7nC @ 10V | ±20V | 165pF @ 25V | - | 500mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET PCH 60V 3A SOT223 |
1 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 150mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | ±20V | 708pF @ 30V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |