晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 348/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
4,698 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 60A POWERPAKSO-8 |
7,668 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37nC @ 10V | ±20V | 1710pF @ 30V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8 |
3,780 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 46A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 2.3V @ 250µA | 144nC @ 10V | ±20V | 4150pF @ 20V | - | 5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 80V 30A 1212-8 |
5,364 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 19.5mOhm @ 10A, 10V | 3V @ 250µA | 28nC @ 10V | ±20V | 780pF @ 40V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
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ON Semiconductor |
MOSFET 2 N-CH 30V 157A 8-PQFN |
4,068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 37A (Ta) | 4.5V, 10V | 1.28mOhm @ 37A, 10V | 3V @ 250µA | 94nC @ 15V | ±20V | 7080pF @ 15V | Standard | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V DFN5 WETTABLE |
3,690 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 20V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A |
3,006 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | ±20V | 7200pF @ 20V | - | 960mW (Ta), 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 60V 35A ATPAK |
8,784 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | 29.5mOhm @ 18A, 10V | - | 55nC @ 10V | ±20V | 2400pF @ 20V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 30A TO251 |
5,238 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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|
ON Semiconductor |
MOSFET N-CH 100V 4A POWER33 |
5,364 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 4A (Ta), 16A (Tc) | 6V, 10V | 56mOhm @ 4A, 10V | 4V @ 250µA | 7.3nC @ 10V | ±20V | 402pF @ 50V | - | 2.5W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 150V 2.7A 8-SOIC |
8,028 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.7A (Ta) | 6V, 10V | 85mOhm @ 3.5A, 10V | 2V @ 250µA (Min) | 21nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 35.8A TO252AA |
4,914 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 35.8A (Tc) | 7.5V, 10V | 37.5mOhm @ 12.2A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 1172pF @ 100V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 12V 34A 8-SOIC |
6,300 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 34A (Tc) | 1.8V, 4.5V | 2.7mOhm @ 15A, 4.5V | 1V @ 250µA | 84nC @ 4.5V | ±8V | 5760pF @ 6V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 80V 20A POWER33 |
6,264 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 7A (Ta), 20A (Tc) | 6V, 10V | 23mOhm @ 7A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 965pF @ 50V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 20A 8-PQFN |
2,070 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 50A (Tc) | 8V, 10V | 3.4mOhm @ 20A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 6435pF @ 30V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
PSMN0R9-25YLD/LFPAK/REEL 7 Q1 |
6,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 300A (Tc) | 4.5V, 10V | 0.85mOhm @ 25A, 10V | 2.2V @ 1mA | 89.8nC @ 10V | ±20V | 6721pF @ 12V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 200V 34.4A SO-8 |
3,454 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 34.4A (Tc) | 7.5V, 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 37nC @ 7.5V | ±20V | 1935pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 100A POWERDI5060 |
2,430 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 2mOhm @ 50A, 10V | 3V @ 250µA | 130.8nC @ 10V | ±20V | 6555pF @ 30V | - | 167W | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 8-MLP |
4,950 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta), 20A (Tc) | 6V, 10V | 24mOhm @ 7A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 965pF @ 50V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
PT8 N-CH 40/20V POWER TRENCH MOS |
4,014 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 141A (Tc) | 4.5V, 10V | 2.1mOhm @ 27A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 5300pF @ 20V | - | 2.8W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
3,672 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.4mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 7A 8-PQFN |
7,542 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta), 22A (Tc) | 4.5V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1305pF @ 50V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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ON Semiconductor |
MOSFET N-CH 80V 60A LL POWER56 |
4,446 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta), 60A (Tc) | 6V, 10V | 7.65mOhm @ 13A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3000pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 200V 35.4A SO-8 |
7,992 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 35.4A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1380pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Diodes Incorporated |
MOSFET N-CHA 60V 37.2A TO220AB |
4,554 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 37.2A (Tc) | 4.5V, 10V | 12mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
7,470 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 67µA | 54nC @ 10V | ±20V | 3900pF @ 40V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
3,510 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.7V @ 250µA | 66nC @ 10V | ±20V | 3105pF @ 30V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Microchip Technology |
MOSFET P-CH 100V 0.48A SOT89-3 |
3,472 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 480mA (Tj) | 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 40A TO-220 |
4,590 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 67W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8 |
4,752 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 93µA | 130nC @ 10V | ±20V | 11000pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |