晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 380/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
RD3P08BBD IS A POWER MOSFET WITH |
8,928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Ta) | 6V, 10V | 11.6mOhm @ 80A, 10V | 4V @ 1mA | 37nC @ 10V | ±20V | 1940pF @ 50V | - | 119W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
700V, A MOSTM N-CHANNEL POWER TR |
7,758 |
|
aMOS5™ | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 950mOhm @ 1A, 10V | 4.1V @ 250µA | 10nC @ 10V | ±20V | 461pF @ 100V | - | 56.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 800V 2.9A DPAK |
6,768 |
|
E | N-Channel | MOSFET (Metal Oxide) | 800V | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | 4V @ 250µA | 10.5nC @ 10V | ±30V | 180pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 7A TO220 |
8,226 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Rohm Semiconductor |
RS1P600BE IS A POWER MOSFET WITH |
6,084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta), 60A (Tc) | 10V | 9.7mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | ±20V | 2200pF @ 50V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 30V |
2,898 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 82A (Ta), 100A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 2.2V @ 250µA | 188nC @ 10V | +20V, -16V | 9530pF @ 15V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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|
STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
4,932 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | - | 4.75V @ 250µA | 22nC @ 10V | - | - | - | - | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 950V 2.5A TO220AB |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 950V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
PSMN1R0-40SSH/SOT1235/LFPAK88 |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 325A (Ta) | 10V | 1mOhm @ 25A, 10V | 3.6V @ 1mA | 137nC @ 10V | ±20V | 10322pF @ 25V | Schottky Diode (Body) | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Vishay Siliconix |
MOSFET P-CH 30V PP SO-8 |
8,208 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 47.9A (Ta), 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.5V @ 250µA | 260nC @ 10V | +16V, -20V | 10955pF @ 15V | - | 6.35W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 620V 7A I2PAK |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 7A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4.5V @ 50µA | 35nC @ 10V | ±30V | 890pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
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STMicroelectronics |
MOSFET N-CH 650V TO-220FP |
8,658 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 455mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 800pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 9A I2PAK |
6,948 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
4,752 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | - | 4.75V @ 250µA | 22nC @ 10V | - | - | - | - | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB |
5,256 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 3065pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
FET 80V 116A POWER56 |
8,244 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
6,390 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 5V, 10V | 9.5mOhm @ 35A, 10V | 1V @ 250µA | 30nC @ 5V | ±18V | 1440pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CHANNEL 950V ITO220AB |
8,280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 950V | - | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
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STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
3,418 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 295mOhm @ 6A, 10V | 5V @ 250µA | 20nC @ 10V | ±25V | 800pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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STMicroelectronics |
MOSFET NCH 600V 11A POWERFLAT |
2,538 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | - | 4V @ 250µA | 21.5nC @ 10V | ±25V | 791pF @ 100V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
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STMicroelectronics |
MOSFET N-CH 100V 12A PWRFLAT5X6 |
6,156 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 18mOhm @ 6A, 10V | 4.5V @ 250µA | 25nC @ 10V | 20V | 1640pF @ 50V | - | 5W (Ta), 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
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Vishay Siliconix |
MOSFET N-CH 20V 50A POLARPAK |
5,940 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 3.4mOhm @ 18.3A, 10V | 3V @ 250µA | 78nC @ 10V | ±20V | 4200pF @ 10V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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ON Semiconductor |
MOSFET N-CH 600V 20.2A POWER88 |
7,002 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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Rohm Semiconductor |
R6009JNJ IS A POWER MOSFET WITH |
5,022 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 620V 2.2A IPAK |
4,572 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 340pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP |
7,038 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 40V LL LFPAK |
7,110 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 190µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
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ON Semiconductor |
T6 60V LL LFPAK |
3,996 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
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Vishay Siliconix |
MOSFET N-CHAN 150V |
6,984 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 64.6A (Ta), 56.7A (Tc) | 7.5V, 10V | 17.7mOhm @ 20A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±20V | 1516pF @ 75V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 60V 120A POWERFLAT |
3,024 |
|
Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 1.4mOhm @ 60A, 10V | 4V @ 250µA | 98nC @ 10V | ±20V | 6500pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |