晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 377/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
2,718 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 830mOhm @ 3A, 10V | 5.5V @ 1mA | 12nC @ 10V | ±20V | 350pF @ 25V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CHAN 40V TO-252 |
8,568 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 12mOhm @ 17.5A, 10V | 2.5V @ 250µA | 112nC @ 10V | ±20V | 5340pF @ 20V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
7,434 |
|
Automotive, AEC-Q101, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2mOhm @ 17.5A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 3000pF @ 25V | - | 127W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
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Vishay Siliconix |
MOSFET N-CHAN 250V POWERPAK SO-8 |
7,974 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3.7A (Ta), 12.3A (Tc) | 7.5V, 10V | 150mOhm @ 3.7A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 600pF @ 125V | - | 5W (Ta), 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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|
ON Semiconductor |
FET 40V 185A |
3,906 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Nexperia |
PSMNR70-30YLH/SOT669/LFPAK |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 300A | - | - | - | 80nC @ 10V | - | 4.852nF @ 10V | Schottky Diode (Body) | - | 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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|
Infineon Technologies |
MOSFET N-CH 100V 67A TO252-3 |
6,426 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
STMicroelectronics |
MOSFET |
3,510 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 5640pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
RJ1G08CGN IS A POWER MOSFET WITH |
6,552 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 4.5V, 10V | 5.6mOhm @ 80A, 10V | 2.5V @ 500µA | 31.1nC @ 10V | ±20V | 2410pF @ 20V | - | 78W (Ta) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
POWER MOSFET |
2,790 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
FET 650V 10A POWER88 |
6,354 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 1050V 1.5A IPAK |
8,712 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 1.5A (Tc) | 10V | 8Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | ±30V | 115pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V PWRFLAT 5X6 |
8,676 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 200V 7.8A IPAK |
8,478 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 7.8A (Tc) | 10V | 360mOhm @ 3.9A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 510pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 650V 7A TO-220AB |
6,066 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 670mOhm @ 3.5A, 10V | 4V @ 250µA | 12.5nC @ 10V | ±25V | 410pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
NCH 600V 7A POWER MOSFET. POWER |
2,826 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 62mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHAN 250V SO-8 |
7,704 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.8A (Ta), 4.1A (Tc) | 7.5V, 10V | 150mOhm @ 2.8A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 600pF @ 125V | - | 2.9W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 30V 24A POWERFLAT5X6 |
7,866 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4.5mOhm @ 12A, 10V | 1V @ 250µA | 17nC @ 4.5V | ±20V | 1690pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
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|
Vishay Siliconix |
MOSFET N-CH 40V 100A SO-8 |
6,282 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204nC @ 10V | +20V, -16V | 10500pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
|
|
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Vishay Siliconix |
MOSFET P-CH 100V 48A POWERPAKSO |
5,886 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.6V @ 250µA | 90nC @ 10V | ±20V | 3395pF @ 50V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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STMicroelectronics |
MOSFET N-CH 100V 52A H2PAK-2 |
3,762 |
|
STripFET™ F3 | N-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 5V, 10V | 20mOhm @ 26A, 10V | 2.5V @ 250µA | 18.5nC @ 5V | ±20V | 1900pF @ 400V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 7.5A TO220FP |
5,022 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 595mOhm @ 3.75A, 10V | 4.75V @ 250µA | 12.4nC @ 10V | ±25V | 390pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CHANNEL 40V 120A TO220 |
7,362 |
|
STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | - | - | - | - | - | - | 190W (Tc) | - | Through Hole | TO-220 | TO-220-3 |
|
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|
Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
8,406 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5nC @ 15V | ±30V | 410pF @ 100V | - | 86W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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STMicroelectronics |
MOSFET N-CH 600V 11A I2PAK |
8,262 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | ±25V | 790pF @ 50V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
STMicroelectronics |
MOSFET N-CH 620V 7A DPAK |
8,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 7A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 35nC @ 10V | ±30V | 890pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 620V 3.8A TO-220FP |
2,052 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | ±30V | 550pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
2,448 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 7.5A D2PAK |
4,860 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±25V | 400pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 525V 4A I2PAK |
5,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 525V | 4A (Tc) | 10V | 2.6Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |