晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 484/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A DPAK |
8,640 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
6,966 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 67A (Ta), 100A (Tc) | 4.5V, 10V | 0.99mOhm @ 20A, 10V | 2.3V @ 250µA | 100nC @ 10V | ±20V | 8320pF @ 20V | - | 7.3W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 45V 100A 8DFN |
6,768 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 20A, 10V | 2.3V @ 250µA | 125nC @ 10V | ±20V | 8900pF @ 22.5V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 0.65A 5-DFN |
5,796 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 650mA (Ta), 8A (Tc) | 10V | 500mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 8.3W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-PowerTSFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 11A TO220 |
7,938 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | ±30V | 646pF @ 100V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
3,780 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO220-FP |
8,964 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 6V, 10V | 12.6mOhm @ 35A, 10V | 3.5V @ 45µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A MPT6 |
5,778 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 50mOhm @ 5A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | ±20V | 850pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 40V 50A 330A 5DFN |
7,218 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 800V 8A TO220F |
7,596 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 4A, 10V | 4.5V @ 800µA | 35nC @ 10V | ±20V | 1565pF @ 100V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262 |
7,290 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4555pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO252-3 |
7,254 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 5mOhm @ 40A, 10V | 3.8V @ 84µA | 64nC @ 10V | ±20V | 4700pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET NCH 60V 100A TO220AB |
4,914 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
3,888 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | ±20V | 5200pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
7,902 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V TO-220-3 |
8,190 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 1770pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 650V 7.7A TO220AB |
3,114 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.7A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25.2nC @ 10V | ±30V | 886pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 7A TO-220F |
8,784 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
7,182 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8 |
8,082 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 35A (Tc) | 2.5V, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 1.8V @ 250µA | 70nC @ 10V | ±12V | 2800pF @ 6V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 2X2 4-MFP |
7,956 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 1A, 4.5V | 1.4V @ 250µA | 17nC @ 4.5V | ±12V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO263 |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V TO-220F-3 |
6,462 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34nC @ 10V | ±30V | 1676pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
4,032 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Ta) | 10V | 3.8mOhm @ 22.5A, 10V | - | 34nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 60V 35A LFPAK |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 10V | 6.7mOhm @ 17.5A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 9.5A TO220 |
8,010 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.5A (Ta), 105A (Tc) | 7V, 10V | 10mOhm @ 20A, 10V | 3.9V @ 250µA | 83nC @ 10V | ±25V | 5200pF @ 50V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 8A |
7,596 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29nC @ 10V | ±20V | 1315pF @ 100V | - | 136W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK |
4,392 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | ±20V | 5171pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 200V 19.4A D2PAK |
3,526 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 200-V (D-S) MOSFET |
3,834 |
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