晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 499/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO-263 |
4,068 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.7mOhm @ 30A, 10V | 3.5V @ 250µA | 145nC @ 10V | ±20V | 7910pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6,750 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | 6540pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T8 60V LOW COSS |
4,626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta), 185A (Tc) | 4.5V, 10V | 1.8mOhm @ 49A, 10V | 2V @ 250µA | 63nC @ 10V | ±20V | 4860pF @ 30V | - | 3.2W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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ON Semiconductor |
MOSFET N-CH 600V 20.2A TO-220F |
6,120 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
8,280 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 80V D2PAK |
6,984 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 15A (Ta), 180A (Tc) | 7V, 10V | 4.2mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±25V | 7820pF @ 40V | - | 1.9W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 65A SO8FL |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 17.5A (Ta), 65A (Tc) | - | 3.4mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | - | 2100pF @ 15V | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 650V 14A D2PAK |
8,856 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 199mOhm @ 7A, 10V | 4.5V @ 1.4mA | 30nC @ 10V | ±30V | 1225pF @ 400V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 500V 4.8A TO-252 |
8,154 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.8A (Tc) | 10V | 1.4Ohm @ 2.4A, 10V | 5.5V @ 50µA | 12.6nC @ 10V | ±30V | 620pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
IXYS |
MOSFET N-CH 200V 15A TO-220 |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 150V 24A TO-220 |
8,586 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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|
Diodes Incorporated |
MOSFET NCH 40V 100A TO220AB |
5,346 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.7mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET NCH 60V 100A TO220AB |
8,712 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 2.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3 |
2,124 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220 |
3,816 |
|
SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 1240pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 4.9A TO-220AB |
4,770 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 4.9A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
2,790 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | ±20V | 4800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Sanken |
MOSFET N-CH 60V TO220S |
7,524 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 8400pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | TO-220S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-200AB |
2,988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 1144pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A DPAK |
3,222 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 9A TO-220SIS |
3,436 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 9A (Ta) | 10V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 56A TO-220 |
3,472 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 168W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-262 |
2,628 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO-220 |
3,096 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO262-3 |
8,082 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
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Infineon Technologies |
MOSFET N-CH 100V 47A TO262-3 |
8,550 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 40V 75A TO220AB |
6,084 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5mOhm @ 50A, 10V | 4V @ 1mA | 127nC @ 10V | ±20V | 5000pF @ 25V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
6,570 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.3mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
6,102 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10.8A (Ta) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 20V 30A PPAK SO-8 |
19,313 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Tc) | 2.5V, 10V | 5mOhm @ 10A, 10V | 1.5V @ 250µA | 32nC @ 10V | ±12V | 1785pF @ 10V | - | 4.6W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |