晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 532/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 300V 44A TO-263 |
8,460 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 250V 50A TO-263 |
2,196 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 50mOhm @ 25A, 10V | 5V @ 1mA | 78nC @ 10V | ±30V | 4000pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 160A DIRECTFET |
3,906 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12222pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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ON Semiconductor |
MOSFET N-CH 30V 47A SO8FL |
5,022 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 54A SO8FL |
5,436 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.1V @ 250µA | 82nC @ 10V | ±20V | 5538pF @ 12V | - | 3.2W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 1000V 2A TO-220AB |
3,942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 7Ohm @ 1A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±20V | 825pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 14A TO-247 |
2,340 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 540mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1480pF @ 25V | - | 327W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 40V 340A |
4,068 |
|
TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 250µA | 256nC @ 10V | ±15V | 13000pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
8,694 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 260A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 10800pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 16A TO-247 |
3,744 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7P |
3,978 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11490pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
SF3 650V 99MOHM E TO247L |
4,446 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 61nC @ 10V | ±30V | 2480pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 500V 16A TO-220FM |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Ta) | 10V | 270mOhm @ 8A, 10V | 4.5V @ 1mA | 50nC @ 10V | ±30V | 1800pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 120V 120A TO262-3 |
5,580 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 4.1mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH |
3,888 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 2060pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 800V 2A TO-263 |
3,418 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 6.2Ohm @ 500mA, 10V | 5.5V @ 250µA | 22nC @ 10V | ±20V | 440pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-247AC |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 30A TO-247AC |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 96nC @ 10V | ±30V | 2550pF @ 100V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 270A D2PAK |
2,196 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 160A TO-263-7 |
3,384 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 1mA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 1000V 5A TO-263 |
6,912 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 5A (Tc) | 10V | 2.8Ohm @ 2.5A, 10V | 6V @ 250µA | 33.4nC @ 10V | ±30V | 1830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 20.3A PWRPAK8X8 |
8,028 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 20.3A (Tc) | 10V | 170mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | ±30V | 2404pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 136A TO263-7 |
7,866 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 136A (Tc) | 8V, 10V | 6mOhm @ 68A, 10V | 4.6V @ 180µA | 68nC @ 10V | ±20V | 5300pF @ 75V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Vishay Siliconix |
MOSFET N-CH 500V 3.1A TO220FP |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.9A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 380A D2PAK-7P |
6,714 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 1.4mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | ±20V | 10990pF @ 40V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK |
3,492 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_LEGACY |
3,042 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_LEGACY |
2,880 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1200V 600MA TO-220 |
2,178 |
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PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 600mA (Tc) | 10V | 32Ohm @ 500mA, 10V | 4.5V @ 50µA | 13.3nC @ 10V | ±20V | 270pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 75A TO-220 |
2,052 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 25mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | ±20V | 2250pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |