晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 635/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK |
7,110 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK |
5,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-262 |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | - | 64nC @ 5V | ±10V | 2200pF @ 25V | - | - | - | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
8,298 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
2,070 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 24A TO-262 |
6,408 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | - | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
Infineon Technologies |
MOSFET P-CH 20V 24A TO-220AB |
8,982 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
8,496 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
2,556 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
3,834 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16nC @ 5V | ±10V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
8,298 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16nC @ 5V | ±10V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
6,750 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 1100pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 200V 17A TO-262 |
3,420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
5,994 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
2,142 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 100V 31A TO220FP |
6,426 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
3,508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
8,082 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
5,274 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
7,956 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
4,806 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
7,902 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
4,068 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
6,534 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
4,032 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
2,808 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 23A DPAK |
8,046 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 23A DPAK |
7,362 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |