晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 667/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 5.5A 8-SOPA |
5,058 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Ta) | 10V | 450mOhm @ 2.7A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A 8-SOPA |
3,114 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 18A TO-220AB |
3,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 72.5mOhm @ 13A, 10V | 5V @ 250µA | 23nC @ 10V | ±20V | 550pF @ 50V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
3,978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 27A, 10V | 2.25V @ 250µA | 56nC @ 4.5V | ±20V | 4860pF @ 15V | - | 3.9W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 16A DIRECTFET |
4,824 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 72A (Tc) | 4.5V, 10V | 5.4mOhm @ 16A, 10V | 2.35V @ 250µA | 29nC @ 4.5V | ±20V | 2380pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
4,680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
4,122 |
|
TinyFET® | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100pF @ 12V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
3,690 |
|
TinyFET® | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100pF @ 12V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Infineon Technologies |
MOSFET N-CH 75V 160A D2PAK7 |
5,454 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 3.8mOhm @ 110A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7580pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET P-CH 30V 10A 8-SOIC |
5,112 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC |
3,762 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 8mOhm @ 15A, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | ±12V | 2550pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
2,304 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | ±20V | 3860pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 51A D2PAK |
5,094 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2770pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 15A DIRECTFET |
3,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 6.8mOhm @ 15A, 10V | 2.55V @ 250µA | 17nC @ 4.5V | ±20V | 1520pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
7,344 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 27A, 10V | 2.25V @ 250µA | 56nC @ 4.5V | ±20V | 4860pF @ 15V | - | 3.9W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 19A DIRECTFET |
7,380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 12A DIRECTFET |
5,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 55A (Tc) | 4.5V, 10V | 9.1mOhm @ 12A, 10V | 2.25V @ 250µA | 17.5nC @ 4.5V | ±20V | 1460pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 16A DIRECTFET |
5,652 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 72A (Tc) | 4.5V, 10V | 5.4mOhm @ 16A, 10V | 2.35V @ 250µA | 29nC @ 4.5V | ±20V | 2380pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
7,200 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
7,074 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1330pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET |
5,058 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2060pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
8,874 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8-SOIC |
5,130 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | ±12V | 310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 43A I-PAK |
3,330 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 780pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 56A I-PAK |
7,524 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1150pF @ 15V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 12V 11A 8-SOIC |
7,146 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | ±12V | 1590pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 49A I-PAK |
3,528 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 60A I-PAK |
6,678 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 8.4mOhm @ 15A, 10V | 2.55V @ 250µA | 14nC @ 4.5V | ±20V | 1190pF @ 10V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK |
8,514 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±16V | 710pF @ 25V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 86A I-PAK |
4,482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |