晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 925/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO263 |
8,874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 3440pF @ 100V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO263 |
2,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 3440pF @ 100V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1595pF @ 100V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO220F |
7,884 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 2028pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 7A TO220F |
4,104 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.1Ohm @ 3.5A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 965pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO262 |
7,344 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 3440pF @ 100V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 60V 90A DPAK |
3,186 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 60V 56A DPAK |
3,474 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | ±20V | 3020pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Diodes Incorporated |
MOSFET P-CH 20V 6.5A 8-SO |
4,626 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 38mOhm @ 5A, 4.5V | 1.1V @ 250µA | 14.4nC @ 4.5V | ±8V | 1496pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO-220AB |
7,380 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 40V 409A D2PAK |
8,136 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK |
5,004 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
|
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
3,436 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO251-3 |
8,208 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO251-3 |
6,318 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO251-3 |
4,194 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO252-3 |
3,528 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO252-3 |
5,202 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO252-3 |
3,528 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 25V 70A PQFN 5X6 |
3,762 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | ±20V | 2000pF @ 13V | - | 3.4W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Microchip Technology |
MOSFET P-CH 240V 0.316A SOT89-3 |
5,058 |
|
- | P-Channel | MOSFET (Metal Oxide) | 240V | 316mA (Tj) | 4.5V, 10V | 8Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
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|
Infineon Technologies |
MOSFET N-CH 60V 210A D2PAK |
4,860 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 6A CPH6 |
2,430 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 43mOhm @ 3A, 10V | 2.6V @ 1mA | 20nC @ 10V | ±20V | 1040pF @ 20V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
|
|
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4,122 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227 |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 6900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227 |
3,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.5mOhm @ 180A, 10V | 4V @ 250µA | 380nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Diodes Incorporated |
MOSFET P-CH 30V 10.4A DFN2523-6 |
2,970 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta) | 4.5V, 10V | 14mOhm @ 9.5A, 10V | 3V @ 250µA | 90nC @ 10V | ±25V | 4414pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO263 |
2,448 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1595pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO263 |
6,534 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 2028pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 60V 13A 8DFN |
7,326 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 15mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 1340pF @ 30V | - | 5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |