晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 954/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH WAFER |
3,168 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
4,086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
6,390 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8,496 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8,892 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
6,714 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
2,070 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8,478 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
6,606 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,866 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,848 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
2,664 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,686 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
3,078 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
5,580 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,776 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
2,538 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8,676 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,254 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
5,526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
6,660 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8,118 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
7,794 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 12A 1212-8 |
3,454 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 2.5V @ 250µA | 10.5nC @ 10V | ±25V | 398pF @ 15V | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 29A D2PAK |
3,636 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 110A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 360nC @ 10V | ±20V | 18800pF @ 20V | - | 3.13W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 90A D2PAK |
4,320 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2.5V @ 250µA | 131nC @ 10V | ±20V | 5286pF @ 20V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 8SOIC |
4,050 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 5.3mOhm @ 19A, 10V | 2.3V @ 250µA | 35nC @ 10V | ±20V | 2200pF @ 15V | Schottky Diode (Body) | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 8-SOIC |
2,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 24mOhm @ 8.5A, 10V | 1.45V @ 250µA | 7nC @ 4.5V | ±12V | 630pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Alpha & Omega Semiconductor |
MOSFET P-CH 8SOIC |
4,914 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 1.8V, 4.5V | 16mOhm @ 11A, 4.5V | 1V @ 250µA | 47nC @ 4.5V | ±8V | 4750pF @ 6V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Alpha & Omega Semiconductor |
MOSFET P-CH 8SOIC |
8,370 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |