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數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

Taiwan Semiconductor Corporation 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Taiwan Semiconductor Corporation
記錄 5,388
頁面 17/180
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
HS3K V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
20,688
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S1BL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
5,454
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
HS3G V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
15,396
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
2A05G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
6,786
-
Standard
600V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES1AL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
2,646
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S15GLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A SOD123W
7,974
-
Standard
400V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
ES1FL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
6,516
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123W
5,040
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 800V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RS1AL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
6,102
-
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLSHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.2A SOD123
2,412
-
Standard
600V
1.2A
1.3V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 600V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS15L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
7,452
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFML R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 500MA SUB SMA
6,480
-
Standard
1000V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S5K V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
19,548
-
Standard
800V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES1BLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2,934
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S5A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
21,924
-
Standard
50V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
17,136
-
Standard
100V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES2C R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
21,276
-
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S5G V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
21,660
-
Standard
400V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
20,220
-
Standard
200V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5GBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AA
21,084
-
Standard
400V
5A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS1H15LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123W
8,748
-
Schottky
150V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500nA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
LL4004G L0
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A MELF
5,238
-
Standard
400V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 150°C
ESH2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
21,048
-
Standard
200V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SS320LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A SOD123W
119,424
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
HS1KLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123W
7,686
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 800V
7pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RS2BA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO214AC
4,230
-
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S10JC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A DO214AB
15,300
-
Standard
600V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HER203G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
6,462
-
Standard
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S10MC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 10A DO214AB
6,696
-
Standard
1000V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
BYG20J R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO214AC
6,084
-
Standard
600V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C