Taiwan Semiconductor Corporation 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Taiwan Semiconductor Corporation
記錄 5,388
頁面 20/180
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A TO220AB |
19,116 |
|
- | Schottky | 45V | 10A | 510mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 15A TO220AB |
18,228 |
|
- | Schottky | 60V | 15A | 600mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO220AB |
19,836 |
|
- | Schottky | 150V | 20A | 860mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 30A TO247AD |
16,548 |
|
- | Standard | 600V | 30A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 30A TO247AD |
8,334 |
|
- | Standard | 200V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO201AD |
16,500 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO201AD |
13,236 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A DO201AD |
12,792 |
|
- | Schottky | 150V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
14,604 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
16,788 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AC |
15,720 |
|
- | Schottky | 60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A TO220AB |
19,776 |
|
- | Schottky | 60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A TO220AB |
22,980 |
|
- | Schottky | 200V | 10A | 900mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 10A ITO220AB |
17,688 |
|
- | Standard | 200V | 10A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A TO220AB |
9,708 |
|
- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
7,512 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A ITO220AC |
22,140 |
|
- | Standard | 200V | 5A | 975mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
20,136 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AB |
21,420 |
|
- | Schottky | 100V | 10A | 790mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
22,320 |
|
- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 10A TO220AB |
22,152 |
|
- | Schottky | 150V | 10A | 960mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AB |
23,700 |
|
- | Schottky | 100V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 10A TO220AB |
22,476 |
|
- | Schottky | 120V | 10A | 930mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A TO220AB |
19,944 |
|
- | Schottky | 200V | 10A | 990mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
17,532 |
|
- | Schottky | 60V | 10A | 650mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A TO220AB |
19,320 |
|
- | Schottky | 45V | 10A | 530mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
19,848 |
|
- | Schottky | 60V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
11,412 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A TO220AB |
23,004 |
|
- | Schottky | 200V | 5A | 910mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 15A TO220AB |
17,712 |
|
- | Schottky | 200V | 15A | 960mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |