Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 12/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4,554 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220 |
7,560 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 58A TO-220 |
8,874 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 52A TO220 |
8,442 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 52A TO-220 |
5,526 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 75A TO-220 |
8,028 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 34A TO-220 |
6,564 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A TO-220SIS |
6,408 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS |
5,382 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 80V 72A TO-220 |
2,376 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 72A (Ta) | 10V | 4.3mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5500pF @ 40V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
6,030 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5,850 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO-220SIS |
8,676 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220 |
5,310 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A DPAK |
7,182 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 32A TO-220 |
8,118 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
6,678 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N) |
8,298 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
8,568 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=20 |
7,344 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
7,290 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
7,362 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
8,334 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-2 |
2,412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
2,556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
2,628 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
3,726 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
2,052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS60V |
3,526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
4,986 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |