Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
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展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 10/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO247 |
5,544 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
6,336 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO220SIS |
6,660 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-247 |
5,130 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO247 |
8,154 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO247 |
5,832 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
108 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO220SIS |
8,064 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 90A TO220 |
6,312 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 126W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
6,732 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 1.7Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 56A TO-220 |
6,024 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Tc) | 10V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
6,390 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5,202 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220AB |
8,496 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO247 |
7,092 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-220 |
4,392 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
7,326 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P |
5,058 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
8,304 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
20,988 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.2Ohm @ 3A, 10V | 4V @ 630µA | 21nC @ 10V | ±30V | 740pF @ 300V | - | 35W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
6,030 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 1130pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
7,800 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34nC @ 10V | ±30V | 1320pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 42A TO-220 |
15,912 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 42A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3100pF @ 60V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 100MA USM |
6,372 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A SSM |
8,586 |
|
U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | ±8V | 43pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.8A SSM |
2,322 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM |
8,874 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 1.8W (Ta) | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 30V 2A UFM |
8,622 |
|
U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | 2.6V @ 1mA | - | ±20V | 280pF @ 15V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.4A TSM |
2,628 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | - | 2.5nC @ 15V | ±20V | 280pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
3,598 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | ±8V | 331pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |