Vishay Siliconix 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Vishay Siliconix
記錄 3,936
頁面 101/132
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 29A SUPER247 |
3,798 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 250µA | 220nC @ 10V | ±30V | 6160pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 60V 57A TO-247AC |
3,168 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 28mOhm @ 34A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2500pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 9.5A TO-247AC |
6,840 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 9.5A (Tc) | 10V | 630mOhm @ 5.7A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 3.4A TO220FP |
3,294 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.4A (Tc) | 10V | 1.1Ohm @ 2A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 200V 4A TO220FP |
2,466 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4A (Tc) | 4V, 5V | 800mOhm @ 2.4A, 5V | 2V @ 250µA | 16nC @ 10V | ±10V | 360pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB |
8,280 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB |
8,640 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
7,470 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A D2PAK |
4,842 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 50V 30A TO-220AB |
2,790 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 30A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 8.8A TO-220AB |
7,290 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 8.8A (Tc) | 10V | 630mOhm @ 5.3A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 55V 17A TO-220-5 |
3,690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 720pF @ 25V | Current Sensing | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 300V 9.3A TO-220AB |
5,670 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 9.3A (Tc) | 10V | 450mOhm @ 5.6A, 10V | 4V @ 250µA | 33nC @ 10V | ±30V | 920pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220-5 |
7,848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 700pF @ 25V | Current Sensing | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220-5 |
7,452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1300pF @ 25V | Current Sensing | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262 |
4,554 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
2,100 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220-5 |
3,384 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2500pF @ 25V | Current Sensing | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220-5 |
5,526 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1200pF @ 25V | Current Sensing | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220-5 |
8,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1200pF @ 25V | Current Sensing | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220-5 |
4,140 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1300pF @ 25V | Current Sensing | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220-5 |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 69nC @ 10V | ±20V | 1300pF @ 25V | Current Sensing | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 200V 18A TO-220-5 |
7,362 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | Current Sensing | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB |
6,660 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 350mOhm @ 10A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2210pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 6.7A TO220FP |
4,392 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 6.7A (Tc) | 10V | 350mOhm @ 4A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2160pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK |
8,208 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 50V 1.7A 4-DIP |
4,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 1.7A (Tc) | 10V | 200mOhm @ 860mA, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 250pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 450V 14A TO-247AC |
8,154 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 14A (Tc) | 10V | 350mOhm @ 8.4A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
4,482 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 240mOhm @ 12A, 10V | 5V @ 250µA | 124nC @ 10V | ±30V | 3540pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 4.9A TO-220AB |
5,958 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 4.9A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |